JPS59123768A - 多元同時スパッタリング装置 - Google Patents
多元同時スパッタリング装置Info
- Publication number
- JPS59123768A JPS59123768A JP57234165A JP23416582A JPS59123768A JP S59123768 A JPS59123768 A JP S59123768A JP 57234165 A JP57234165 A JP 57234165A JP 23416582 A JP23416582 A JP 23416582A JP S59123768 A JPS59123768 A JP S59123768A
- Authority
- JP
- Japan
- Prior art keywords
- sputtering
- deposited
- thin film
- vapor
- component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 175
- 238000000034 method Methods 0.000 title claims description 19
- 238000007740 vapor deposition Methods 0.000 claims abstract description 31
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 12
- 230000001678 irradiating effect Effects 0.000 claims abstract description 4
- 239000010409 thin film Substances 0.000 claims description 105
- 239000010408 film Substances 0.000 claims description 49
- 238000000151 deposition Methods 0.000 claims description 42
- 230000008021 deposition Effects 0.000 claims description 39
- 239000000203 mixture Substances 0.000 claims description 24
- 238000001704 evaporation Methods 0.000 claims description 13
- 230000008020 evaporation Effects 0.000 claims description 11
- 239000010410 layer Substances 0.000 claims description 11
- 239000002356 single layer Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 5
- 239000000470 constituent Substances 0.000 claims 1
- 238000005477 sputtering target Methods 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 17
- 230000015572 biosynthetic process Effects 0.000 description 15
- 101100481408 Danio rerio tie2 gene Proteins 0.000 description 11
- 101100481410 Mus musculus Tek gene Proteins 0.000 description 11
- 239000002184 metal Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 229910044991 metal oxide Inorganic materials 0.000 description 7
- 238000001179 sorption measurement Methods 0.000 description 7
- 150000004706 metal oxides Chemical class 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 239000013077 target material Substances 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 230000009977 dual effect Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- -1 VC1 metals Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 150000004679 hydroxides Chemical class 0.000 description 2
- 150000001247 metal acetylides Chemical class 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 241000251468 Actinopterygii Species 0.000 description 1
- 235000017166 Bambusa arundinacea Nutrition 0.000 description 1
- 235000017491 Bambusa tulda Nutrition 0.000 description 1
- 241001330002 Bambuseae Species 0.000 description 1
- 241001282110 Pagrus major Species 0.000 description 1
- 235000015334 Phyllostachys viridis Nutrition 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000004378 air conditioning Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011425 bamboo Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000012864 cross contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910001922 gold oxide Inorganic materials 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005511 kinetic theory Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000002062 proliferating effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 235000011888 snacks Nutrition 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Surface Treatment Of Glass (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57234165A JPS59123768A (ja) | 1982-12-28 | 1982-12-28 | 多元同時スパッタリング装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57234165A JPS59123768A (ja) | 1982-12-28 | 1982-12-28 | 多元同時スパッタリング装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59123768A true JPS59123768A (ja) | 1984-07-17 |
| JPS626746B2 JPS626746B2 (en:Method) | 1987-02-13 |
Family
ID=16966676
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57234165A Granted JPS59123768A (ja) | 1982-12-28 | 1982-12-28 | 多元同時スパッタリング装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59123768A (en:Method) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1985002866A1 (en) * | 1983-12-23 | 1985-07-04 | Ion Tech Limited | Sputter deposition |
| JPS61153274A (ja) * | 1984-12-27 | 1986-07-11 | Matsushita Electric Ind Co Ltd | スパツタ装置 |
| JPH02232366A (ja) * | 1989-03-06 | 1990-09-14 | Ulvac Corp | スパッタ装置 |
| EP0583736A1 (en) * | 1992-08-14 | 1994-02-23 | Hughes Aircraft Company | Plasma-enhanced magnetron-sputtered deposition of materials |
| WO2003042423A1 (en) * | 2001-11-13 | 2003-05-22 | Nordiko Limited | Apparatus |
| JP2007043122A (ja) * | 2005-06-30 | 2007-02-15 | Semiconductor Energy Lab Co Ltd | 発光素子、発光装置及び電子機器 |
| US8378570B2 (en) | 2005-06-30 | 2013-02-19 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting element, light emitting device, and electronic apparatus having first and second composite layers with different metal concentrations |
| US8618574B2 (en) | 2004-08-04 | 2013-12-31 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, display device, and electronic appliance |
| US20150159264A1 (en) * | 2013-12-06 | 2015-06-11 | Shin-Etsu Chemical Co., Ltd. | Sputter deposition method, sputtering system, manufacture of photomask blank, and photomask blank |
| CN105420679A (zh) * | 2015-11-16 | 2016-03-23 | 徐州中韵新材料科技有限公司 | 一种孪生对靶磁控溅射制备覆铜陶瓷基板的装置及方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5379776A (en) * | 1976-12-24 | 1978-07-14 | Ulvac Corp | Sputtering apparatus |
-
1982
- 1982-12-28 JP JP57234165A patent/JPS59123768A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5379776A (en) * | 1976-12-24 | 1978-07-14 | Ulvac Corp | Sputtering apparatus |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1985002866A1 (en) * | 1983-12-23 | 1985-07-04 | Ion Tech Limited | Sputter deposition |
| JPS61153274A (ja) * | 1984-12-27 | 1986-07-11 | Matsushita Electric Ind Co Ltd | スパツタ装置 |
| JPH02232366A (ja) * | 1989-03-06 | 1990-09-14 | Ulvac Corp | スパッタ装置 |
| EP0583736A1 (en) * | 1992-08-14 | 1994-02-23 | Hughes Aircraft Company | Plasma-enhanced magnetron-sputtered deposition of materials |
| US5346600A (en) * | 1992-08-14 | 1994-09-13 | Hughes Aircraft Company | Plasma-enhanced magnetron-sputtered deposition of materials |
| WO2003042423A1 (en) * | 2001-11-13 | 2003-05-22 | Nordiko Limited | Apparatus |
| JP2009161861A (ja) * | 2001-11-13 | 2009-07-23 | Gradebay Ltd | 真空スパッタリング装置とその蒸着方法 |
| US8618574B2 (en) | 2004-08-04 | 2013-12-31 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, display device, and electronic appliance |
| JP2007043122A (ja) * | 2005-06-30 | 2007-02-15 | Semiconductor Energy Lab Co Ltd | 発光素子、発光装置及び電子機器 |
| US8519617B2 (en) | 2005-06-30 | 2013-08-27 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting element having a metal oxide composite layer, and light emitting device, and electronic apparatus |
| US8378570B2 (en) | 2005-06-30 | 2013-02-19 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting element, light emitting device, and electronic apparatus having first and second composite layers with different metal concentrations |
| US20150159264A1 (en) * | 2013-12-06 | 2015-06-11 | Shin-Etsu Chemical Co., Ltd. | Sputter deposition method, sputtering system, manufacture of photomask blank, and photomask blank |
| JP2015110814A (ja) * | 2013-12-06 | 2015-06-18 | 信越化学工業株式会社 | スパッタ成膜方法、スパッタ装置、フォトマスクブランクの製造方法及びフォトマスクブランク |
| CN105420679A (zh) * | 2015-11-16 | 2016-03-23 | 徐州中韵新材料科技有限公司 | 一种孪生对靶磁控溅射制备覆铜陶瓷基板的装置及方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS626746B2 (en:Method) | 1987-02-13 |
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