JPS59121866A - 半導体メモリ素子の製造方法 - Google Patents
半導体メモリ素子の製造方法Info
- Publication number
- JPS59121866A JPS59121866A JP57227296A JP22729682A JPS59121866A JP S59121866 A JPS59121866 A JP S59121866A JP 57227296 A JP57227296 A JP 57227296A JP 22729682 A JP22729682 A JP 22729682A JP S59121866 A JPS59121866 A JP S59121866A
- Authority
- JP
- Japan
- Prior art keywords
- type impurity
- type
- capacitor
- gate
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 21
- 239000003990 capacitor Substances 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 230000010287 polarization Effects 0.000 claims 1
- 239000012535 impurity Substances 0.000 abstract description 43
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 19
- 229920005591 polysilicon Polymers 0.000 abstract description 19
- 238000009792 diffusion process Methods 0.000 abstract description 11
- 238000005468 ion implantation Methods 0.000 abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 7
- 150000002500 ions Chemical class 0.000 abstract description 7
- 229910052710 silicon Inorganic materials 0.000 abstract description 7
- 239000010703 silicon Substances 0.000 abstract description 7
- 239000013078 crystal Substances 0.000 abstract description 6
- 238000005530 etching Methods 0.000 abstract description 5
- 229910052785 arsenic Inorganic materials 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 4
- 229910052796 boron Inorganic materials 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 230000007257 malfunction Effects 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 101100192134 Mus musculus Psg22 gene Proteins 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 241000293849 Cordylanthus Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57227296A JPS59121866A (ja) | 1982-12-28 | 1982-12-28 | 半導体メモリ素子の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57227296A JPS59121866A (ja) | 1982-12-28 | 1982-12-28 | 半導体メモリ素子の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59121866A true JPS59121866A (ja) | 1984-07-14 |
| JPH0342513B2 JPH0342513B2 (enExample) | 1991-06-27 |
Family
ID=16858586
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57227296A Granted JPS59121866A (ja) | 1982-12-28 | 1982-12-28 | 半導体メモリ素子の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59121866A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5093702A (en) * | 1988-11-28 | 1992-03-03 | Nec Electronics, Inc. | Method of alignment for semiconductor memory device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5645066A (en) * | 1979-09-19 | 1981-04-24 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Semiconductor device and manufacture therefor |
| JPS5649555A (en) * | 1979-09-28 | 1981-05-06 | Hitachi Ltd | Semiconductor memory and manufacture thereof |
| JPS5685853A (en) * | 1979-12-14 | 1981-07-13 | Hitachi Ltd | Manufacture of semiconductor device |
-
1982
- 1982-12-28 JP JP57227296A patent/JPS59121866A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5645066A (en) * | 1979-09-19 | 1981-04-24 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Semiconductor device and manufacture therefor |
| JPS5649555A (en) * | 1979-09-28 | 1981-05-06 | Hitachi Ltd | Semiconductor memory and manufacture thereof |
| JPS5685853A (en) * | 1979-12-14 | 1981-07-13 | Hitachi Ltd | Manufacture of semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5093702A (en) * | 1988-11-28 | 1992-03-03 | Nec Electronics, Inc. | Method of alignment for semiconductor memory device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0342513B2 (enExample) | 1991-06-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4312680A (en) | Method of manufacturing submicron channel transistors | |
| EP0190928A2 (en) | Integrated MOS transistor and method of manufacturing it | |
| JPH0365905B2 (enExample) | ||
| JPS643345B2 (enExample) | ||
| JPH03218626A (ja) | 半導体装置の配線接触構造 | |
| JPS60213053A (ja) | 半導体メモリ素子 | |
| US4413403A (en) | Method of producing semiconductor devices | |
| JPS62174968A (ja) | 半導体装置 | |
| JPH07161835A (ja) | 半導体記憶装置の製造方法 | |
| US5227319A (en) | Method of manufacturing a semiconductor device | |
| JPS59211282A (ja) | 集積回路の製造方法 | |
| US5986310A (en) | Prolonging a polysilicon layer in smaller memory cells to prevent polysilicon load punch through | |
| JPS61107768A (ja) | 半導体記憶装置 | |
| JPS6340362A (ja) | 半導体記憶装置 | |
| JPH02122522A (ja) | 半導体装置とその製造方法 | |
| JPS6237960A (ja) | 読み出し専用半導体記憶装置の製造方法 | |
| JPH0342513B2 (enExample) | ||
| JPS628956B2 (enExample) | ||
| JPS6240765A (ja) | 読み出し専用半導体記憶装置およびその製造方法 | |
| KR100390891B1 (ko) | 고집적반도체소자의제조방법 | |
| JPS6010662A (ja) | 半導体記憶装置 | |
| JPS6316672A (ja) | 半導体素子の製造方法 | |
| JPS6154661A (ja) | 半導体装置の製造方法 | |
| KR100245135B1 (ko) | 동일박막내에 고저항체 및 저저항 도전체 형성방법 | |
| KR890003828B1 (ko) | 반도체 매모리장치의 제조방법 |