JPS59120240A - プラズマ気相反応装置 - Google Patents

プラズマ気相反応装置

Info

Publication number
JPS59120240A
JPS59120240A JP57229370A JP22937082A JPS59120240A JP S59120240 A JPS59120240 A JP S59120240A JP 57229370 A JP57229370 A JP 57229370A JP 22937082 A JP22937082 A JP 22937082A JP S59120240 A JPS59120240 A JP S59120240A
Authority
JP
Japan
Prior art keywords
electrode
electrodes
plasma
grid
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57229370A
Other languages
English (en)
Japanese (ja)
Other versions
JPS621535B2 (enExample
Inventor
Shunpei Yamazaki
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP57229370A priority Critical patent/JPS59120240A/ja
Publication of JPS59120240A publication Critical patent/JPS59120240A/ja
Publication of JPS621535B2 publication Critical patent/JPS621535B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
  • Recrystallisation Techniques (AREA)
JP57229370A 1982-12-27 1982-12-27 プラズマ気相反応装置 Granted JPS59120240A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57229370A JPS59120240A (ja) 1982-12-27 1982-12-27 プラズマ気相反応装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57229370A JPS59120240A (ja) 1982-12-27 1982-12-27 プラズマ気相反応装置

Publications (2)

Publication Number Publication Date
JPS59120240A true JPS59120240A (ja) 1984-07-11
JPS621535B2 JPS621535B2 (enExample) 1987-01-14

Family

ID=16891102

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57229370A Granted JPS59120240A (ja) 1982-12-27 1982-12-27 プラズマ気相反応装置

Country Status (1)

Country Link
JP (1) JPS59120240A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5250463A (en) * 1990-06-26 1993-10-05 Kabushiki Kaisha Toshiba Method of making doped semiconductor film having uniform impurity concentration on semiconductor substrate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5250463A (en) * 1990-06-26 1993-10-05 Kabushiki Kaisha Toshiba Method of making doped semiconductor film having uniform impurity concentration on semiconductor substrate
US5702529A (en) * 1990-06-26 1997-12-30 Kabushiki Kaisha Toshiba Method of making doped semiconductor film having uniform impurity concentration on semiconductor substrate and apparatus for making the same

Also Published As

Publication number Publication date
JPS621535B2 (enExample) 1987-01-14

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