JPS59117182A - ホ−ル素子の製造方法 - Google Patents
ホ−ル素子の製造方法Info
- Publication number
- JPS59117182A JPS59117182A JP57232516A JP23251682A JPS59117182A JP S59117182 A JPS59117182 A JP S59117182A JP 57232516 A JP57232516 A JP 57232516A JP 23251682 A JP23251682 A JP 23251682A JP S59117182 A JPS59117182 A JP S59117182A
- Authority
- JP
- Japan
- Prior art keywords
- active layer
- layer
- hall element
- ions
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 150000002500 ions Chemical class 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 11
- 239000012535 impurity Substances 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 230000003213 activating effect Effects 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 9
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 8
- 230000001133 acceleration Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000011651 chromium Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005755 formation reaction Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- -1 silicon ions Chemical class 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Landscapes
- Hall/Mr Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57232516A JPS59117182A (ja) | 1982-12-23 | 1982-12-23 | ホ−ル素子の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57232516A JPS59117182A (ja) | 1982-12-23 | 1982-12-23 | ホ−ル素子の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59117182A true JPS59117182A (ja) | 1984-07-06 |
| JPS637033B2 JPS637033B2 (enrdf_load_stackoverflow) | 1988-02-15 |
Family
ID=16940548
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57232516A Granted JPS59117182A (ja) | 1982-12-23 | 1982-12-23 | ホ−ル素子の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59117182A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6242473A (ja) * | 1985-08-19 | 1987-02-24 | Matsushita Electronics Corp | ホ−ル効果装置およびその製造方法 |
| US6542068B1 (en) * | 1998-04-27 | 2003-04-01 | Myonic Ag | Vertical hall effect sensor and a brushless electric motor having a vertical hall effect sensor |
| JP2016152271A (ja) * | 2015-02-16 | 2016-08-22 | エスアイアイ・セミコンダクタ株式会社 | 縦型ホール素子の製造方法 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02256529A (ja) * | 1989-03-30 | 1990-10-17 | Oi Seisakusho Co Ltd | 自動車用シートクッションの作動装置 |
-
1982
- 1982-12-23 JP JP57232516A patent/JPS59117182A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6242473A (ja) * | 1985-08-19 | 1987-02-24 | Matsushita Electronics Corp | ホ−ル効果装置およびその製造方法 |
| US6542068B1 (en) * | 1998-04-27 | 2003-04-01 | Myonic Ag | Vertical hall effect sensor and a brushless electric motor having a vertical hall effect sensor |
| JP2016152271A (ja) * | 2015-02-16 | 2016-08-22 | エスアイアイ・セミコンダクタ株式会社 | 縦型ホール素子の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS637033B2 (enrdf_load_stackoverflow) | 1988-02-15 |
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