JPS59115617A - オフゲートパルス増幅回路 - Google Patents
オフゲートパルス増幅回路Info
- Publication number
- JPS59115617A JPS59115617A JP57223964A JP22396482A JPS59115617A JP S59115617 A JPS59115617 A JP S59115617A JP 57223964 A JP57223964 A JP 57223964A JP 22396482 A JP22396482 A JP 22396482A JP S59115617 A JPS59115617 A JP S59115617A
- Authority
- JP
- Japan
- Prior art keywords
- winding
- capacitor
- voltage
- diode
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004804 winding Methods 0.000 claims abstract description 68
- 239000003990 capacitor Substances 0.000 claims abstract description 28
- 230000003321 amplification Effects 0.000 claims description 12
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 12
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000005284 excitation Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 230000007423 decrease Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000011084 recovery Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
- H03K17/601—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors using transformer coupling
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Power Conversion In General (AREA)
- Thyristor Switches And Gates (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57223964A JPS59115617A (ja) | 1982-12-22 | 1982-12-22 | オフゲートパルス増幅回路 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57223964A JPS59115617A (ja) | 1982-12-22 | 1982-12-22 | オフゲートパルス増幅回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59115617A true JPS59115617A (ja) | 1984-07-04 |
JPH0318374B2 JPH0318374B2 (enrdf_load_stackoverflow) | 1991-03-12 |
Family
ID=16806445
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57223964A Granted JPS59115617A (ja) | 1982-12-22 | 1982-12-22 | オフゲートパルス増幅回路 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59115617A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4752705A (en) * | 1985-12-16 | 1988-06-21 | Kabushiki Kaisha Toshiba | Off-gate circuit for a GTO thyristor |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56136023A (en) * | 1980-03-27 | 1981-10-23 | Toshiba Corp | Pulse amplifying circuit |
-
1982
- 1982-12-22 JP JP57223964A patent/JPS59115617A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56136023A (en) * | 1980-03-27 | 1981-10-23 | Toshiba Corp | Pulse amplifying circuit |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4752705A (en) * | 1985-12-16 | 1988-06-21 | Kabushiki Kaisha Toshiba | Off-gate circuit for a GTO thyristor |
Also Published As
Publication number | Publication date |
---|---|
JPH0318374B2 (enrdf_load_stackoverflow) | 1991-03-12 |
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