JPS59114818A - 電子ビ−ムパタ−ン描画方法 - Google Patents
電子ビ−ムパタ−ン描画方法Info
- Publication number
- JPS59114818A JPS59114818A JP22417282A JP22417282A JPS59114818A JP S59114818 A JPS59114818 A JP S59114818A JP 22417282 A JP22417282 A JP 22417282A JP 22417282 A JP22417282 A JP 22417282A JP S59114818 A JPS59114818 A JP S59114818A
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- mask substrate
- output
- objective lens
- correction value
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010894 electron beam technology Methods 0.000 title claims abstract description 34
- 238000000034 method Methods 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 238000012937 correction Methods 0.000 claims abstract description 40
- 239000003550 marker Substances 0.000 claims description 8
- 230000001360 synchronised effect Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 6
- 238000013461 design Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 238000001514 detection method Methods 0.000 description 4
- 239000011651 chromium Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electron Beam Exposure (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22417282A JPS59114818A (ja) | 1982-12-21 | 1982-12-21 | 電子ビ−ムパタ−ン描画方法 |
| GB08333914A GB2132390B (en) | 1982-12-21 | 1983-12-20 | Method of and apparatus for drawing an electron beam pattern |
| DE19833346001 DE3346001A1 (de) | 1982-12-21 | 1983-12-20 | Verfahren und vorrichtung zum aufzeichnen eines elektronenstrahlmusters |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22417282A JPS59114818A (ja) | 1982-12-21 | 1982-12-21 | 電子ビ−ムパタ−ン描画方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59114818A true JPS59114818A (ja) | 1984-07-03 |
| JPH058566B2 JPH058566B2 (de) | 1993-02-02 |
Family
ID=16809654
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22417282A Granted JPS59114818A (ja) | 1982-12-21 | 1982-12-21 | 電子ビ−ムパタ−ン描画方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS59114818A (de) |
| DE (1) | DE3346001A1 (de) |
| GB (1) | GB2132390B (de) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6246518A (ja) * | 1985-08-23 | 1987-02-28 | Toshiba Corp | 荷電ビ−ム描画方法 |
| DE4442596C1 (de) * | 1994-11-30 | 1996-04-04 | Heidelberg Instruments Mikrotechnik Gmbh | Verfahren zur Korrektur von Positionsmeßfehlern |
| DE19811081C1 (de) * | 1998-03-13 | 1999-10-28 | Siemens Ag | Haltevorrichtung für Photoblanks |
| DE19816220C1 (de) * | 1998-04-09 | 1999-07-22 | Siemens Ag | Verfahren zur Überwachung der Erdung eines Maskenblanks |
| DE10232230A1 (de) | 2002-07-17 | 2004-02-05 | Pro-Beam Ag & Co. Kgaa | Verfahren zum Vermessen des Intensitätsprofils eines Elektronenstrahls, insbesondere eines Strahls eines Elektronenstrahlbearbeitungsgeräts, und/oder zum Vermessen einer Optik für einen Elektronenstrahl und/oder zum Justieren einer Optik für einen Elektronenstrahl, Meßstruktur für ein solches Verfahren und Elektronenstrahlbearbeitungsgerät |
| EP3630391A1 (de) | 2017-05-22 | 2020-04-08 | Howmedica Osteonics Corp. | Vorrichtung zur in-situ-herstellungsprozessüberwachung und rückkopplungssteuerung eines generativen fertigungsprozesses mit elektronenstrahl |
| EP3597333A1 (de) | 2018-07-19 | 2020-01-22 | Howmedica Osteonics Corporation | System und verfahren für prozessinterne elektronenstrahlprofil- und positionsanalysen |
| DE102021202506A1 (de) | 2021-03-15 | 2022-03-24 | Carl Zeiss Smt Gmbh | Verfahren zum Bestimmen einer Strahlform eines Elektronenstrahls |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5498577A (en) * | 1978-01-20 | 1979-08-03 | Nippon Telegr & Teleph Corp <Ntt> | Correction method for electron beam scanning position |
| JPS54112173A (en) * | 1978-02-13 | 1979-09-01 | Ibm | Electron beam system |
| JPS5552223A (en) * | 1978-10-13 | 1980-04-16 | Nippon Telegr & Teleph Corp <Ntt> | Exposure method in electronic beam exposure device |
| JPS5621321A (en) * | 1979-07-27 | 1981-02-27 | Fujitsu Ltd | Automatically setting method of focus and exposure coefficient of electron beam exposure apparatus |
| JPS56124234A (en) * | 1980-03-05 | 1981-09-29 | Hitachi Ltd | Correcting method for electron beam deflection |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3644700A (en) * | 1969-12-15 | 1972-02-22 | Ibm | Method and apparatus for controlling an electron beam |
| JPS56103420A (en) * | 1980-01-23 | 1981-08-18 | Hitachi Ltd | Compensating method for deflection distortion in charged particle beam apparatus |
-
1982
- 1982-12-21 JP JP22417282A patent/JPS59114818A/ja active Granted
-
1983
- 1983-12-20 DE DE19833346001 patent/DE3346001A1/de active Granted
- 1983-12-20 GB GB08333914A patent/GB2132390B/en not_active Expired
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5498577A (en) * | 1978-01-20 | 1979-08-03 | Nippon Telegr & Teleph Corp <Ntt> | Correction method for electron beam scanning position |
| JPS54112173A (en) * | 1978-02-13 | 1979-09-01 | Ibm | Electron beam system |
| JPS5552223A (en) * | 1978-10-13 | 1980-04-16 | Nippon Telegr & Teleph Corp <Ntt> | Exposure method in electronic beam exposure device |
| JPS5621321A (en) * | 1979-07-27 | 1981-02-27 | Fujitsu Ltd | Automatically setting method of focus and exposure coefficient of electron beam exposure apparatus |
| JPS56124234A (en) * | 1980-03-05 | 1981-09-29 | Hitachi Ltd | Correcting method for electron beam deflection |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2132390B (en) | 1986-07-30 |
| GB8333914D0 (en) | 1984-02-01 |
| JPH058566B2 (de) | 1993-02-02 |
| DE3346001A1 (de) | 1984-07-05 |
| DE3346001C2 (de) | 1991-09-05 |
| GB2132390A (en) | 1984-07-04 |
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