JPS59113627A - パタ−ン化されたアルミニウム層を形成する方法 - Google Patents

パタ−ン化されたアルミニウム層を形成する方法

Info

Publication number
JPS59113627A
JPS59113627A JP22355282A JP22355282A JPS59113627A JP S59113627 A JPS59113627 A JP S59113627A JP 22355282 A JP22355282 A JP 22355282A JP 22355282 A JP22355282 A JP 22355282A JP S59113627 A JPS59113627 A JP S59113627A
Authority
JP
Japan
Prior art keywords
layer
patterned
metal layer
mask
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP22355282A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0144014B2 (enrdf_load_stackoverflow
Inventor
Yuji Imai
勇次 今井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Corp filed Critical TDK Corp
Priority to JP22355282A priority Critical patent/JPS59113627A/ja
Priority to US06/511,403 priority patent/US4629539A/en
Publication of JPS59113627A publication Critical patent/JPS59113627A/ja
Priority to US06/642,429 priority patent/US4642168A/en
Publication of JPH0144014B2 publication Critical patent/JPH0144014B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C25F3/14—Etching locally
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
JP22355282A 1982-07-08 1982-12-20 パタ−ン化されたアルミニウム層を形成する方法 Granted JPS59113627A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP22355282A JPS59113627A (ja) 1982-12-20 1982-12-20 パタ−ン化されたアルミニウム層を形成する方法
US06/511,403 US4629539A (en) 1982-07-08 1983-07-07 Metal layer patterning method
US06/642,429 US4642168A (en) 1982-07-08 1984-08-20 Metal layer patterning method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22355282A JPS59113627A (ja) 1982-12-20 1982-12-20 パタ−ン化されたアルミニウム層を形成する方法

Publications (2)

Publication Number Publication Date
JPS59113627A true JPS59113627A (ja) 1984-06-30
JPH0144014B2 JPH0144014B2 (enrdf_load_stackoverflow) 1989-09-25

Family

ID=16799941

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22355282A Granted JPS59113627A (ja) 1982-07-08 1982-12-20 パタ−ン化されたアルミニウム層を形成する方法

Country Status (1)

Country Link
JP (1) JPS59113627A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0322434A (ja) * 1989-06-19 1991-01-30 Nec Corp 半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0322434A (ja) * 1989-06-19 1991-01-30 Nec Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JPH0144014B2 (enrdf_load_stackoverflow) 1989-09-25

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