JPS59107998A - 結晶成長装置 - Google Patents

結晶成長装置

Info

Publication number
JPS59107998A
JPS59107998A JP21416482A JP21416482A JPS59107998A JP S59107998 A JPS59107998 A JP S59107998A JP 21416482 A JP21416482 A JP 21416482A JP 21416482 A JP21416482 A JP 21416482A JP S59107998 A JPS59107998 A JP S59107998A
Authority
JP
Japan
Prior art keywords
crystal
crystal substrate
growth
tube
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21416482A
Other languages
English (en)
Japanese (ja)
Other versions
JPH039077B2 (enExample
Inventor
Kazumi Kasai
和美 河西
Kenya Nakai
中井　建弥
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP21416482A priority Critical patent/JPS59107998A/ja
Publication of JPS59107998A publication Critical patent/JPS59107998A/ja
Publication of JPH039077B2 publication Critical patent/JPH039077B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP21416482A 1982-12-07 1982-12-07 結晶成長装置 Granted JPS59107998A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21416482A JPS59107998A (ja) 1982-12-07 1982-12-07 結晶成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21416482A JPS59107998A (ja) 1982-12-07 1982-12-07 結晶成長装置

Publications (2)

Publication Number Publication Date
JPS59107998A true JPS59107998A (ja) 1984-06-22
JPH039077B2 JPH039077B2 (enExample) 1991-02-07

Family

ID=16651289

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21416482A Granted JPS59107998A (ja) 1982-12-07 1982-12-07 結晶成長装置

Country Status (1)

Country Link
JP (1) JPS59107998A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2655772A1 (fr) * 1989-12-08 1991-06-14 Thomson Composants Microondes Dispositif antipollution pour bati vertical de depot en phase gazeuse.
EP0863228A1 (en) * 1997-02-25 1998-09-09 Shin-Etsu Handotai Company Limited Vertical type CVD apparatus
JP2008180222A (ja) * 2008-02-12 2008-08-07 Kawamoto Pump Mfg Co Ltd エアトラップ

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5788099A (en) * 1980-11-20 1982-06-01 Fujitsu Ltd Vapor phase growing method for compound semiconductor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5788099A (en) * 1980-11-20 1982-06-01 Fujitsu Ltd Vapor phase growing method for compound semiconductor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2655772A1 (fr) * 1989-12-08 1991-06-14 Thomson Composants Microondes Dispositif antipollution pour bati vertical de depot en phase gazeuse.
EP0863228A1 (en) * 1997-02-25 1998-09-09 Shin-Etsu Handotai Company Limited Vertical type CVD apparatus
JP2008180222A (ja) * 2008-02-12 2008-08-07 Kawamoto Pump Mfg Co Ltd エアトラップ

Also Published As

Publication number Publication date
JPH039077B2 (enExample) 1991-02-07

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