JPS59107516A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS59107516A JPS59107516A JP21796282A JP21796282A JPS59107516A JP S59107516 A JPS59107516 A JP S59107516A JP 21796282 A JP21796282 A JP 21796282A JP 21796282 A JP21796282 A JP 21796282A JP S59107516 A JPS59107516 A JP S59107516A
- Authority
- JP
- Japan
- Prior art keywords
- photoresist
- layer
- constituting
- plasma etching
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000004065 semiconductor Substances 0.000 title claims description 7
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 18
- 239000007789 gas Substances 0.000 claims abstract description 8
- 238000001020 plasma etching Methods 0.000 claims abstract description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000001257 hydrogen Substances 0.000 claims abstract description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 abstract description 6
- 238000000059 patterning Methods 0.000 abstract description 4
- 239000000758 substrate Substances 0.000 abstract description 4
- 239000012495 reaction gas Substances 0.000 abstract description 3
- 238000005468 ion implantation Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21796282A JPS59107516A (ja) | 1982-12-13 | 1982-12-13 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21796282A JPS59107516A (ja) | 1982-12-13 | 1982-12-13 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59107516A true JPS59107516A (ja) | 1984-06-21 |
JPH0410211B2 JPH0410211B2 (enrdf_load_stackoverflow) | 1992-02-24 |
Family
ID=16712449
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21796282A Granted JPS59107516A (ja) | 1982-12-13 | 1982-12-13 | 半導体装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59107516A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05267248A (ja) * | 1992-03-19 | 1993-10-15 | Yamaha Corp | 半導体装置の製造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS527315A (en) * | 1975-05-28 | 1977-01-20 | Pechiney Aluminium | Making of wire consist of aluminium magnesiummsilicon alloy |
JPS5454578A (en) * | 1977-10-11 | 1979-04-28 | Fujitsu Ltd | Gas plasma etching method |
JPS56135928A (en) * | 1980-03-27 | 1981-10-23 | Fujitsu Ltd | Forming method for pattern of silicone resin |
-
1982
- 1982-12-13 JP JP21796282A patent/JPS59107516A/ja active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS527315A (en) * | 1975-05-28 | 1977-01-20 | Pechiney Aluminium | Making of wire consist of aluminium magnesiummsilicon alloy |
JPS5454578A (en) * | 1977-10-11 | 1979-04-28 | Fujitsu Ltd | Gas plasma etching method |
JPS56135928A (en) * | 1980-03-27 | 1981-10-23 | Fujitsu Ltd | Forming method for pattern of silicone resin |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05267248A (ja) * | 1992-03-19 | 1993-10-15 | Yamaha Corp | 半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH0410211B2 (enrdf_load_stackoverflow) | 1992-02-24 |
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