JPH0410211B2 - - Google Patents

Info

Publication number
JPH0410211B2
JPH0410211B2 JP57217962A JP21796282A JPH0410211B2 JP H0410211 B2 JPH0410211 B2 JP H0410211B2 JP 57217962 A JP57217962 A JP 57217962A JP 21796282 A JP21796282 A JP 21796282A JP H0410211 B2 JPH0410211 B2 JP H0410211B2
Authority
JP
Japan
Prior art keywords
photoresist
layer
nitride film
covered
film pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57217962A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59107516A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP21796282A priority Critical patent/JPS59107516A/ja
Publication of JPS59107516A publication Critical patent/JPS59107516A/ja
Publication of JPH0410211B2 publication Critical patent/JPH0410211B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/36Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP21796282A 1982-12-13 1982-12-13 半導体装置の製造方法 Granted JPS59107516A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21796282A JPS59107516A (ja) 1982-12-13 1982-12-13 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21796282A JPS59107516A (ja) 1982-12-13 1982-12-13 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59107516A JPS59107516A (ja) 1984-06-21
JPH0410211B2 true JPH0410211B2 (enrdf_load_stackoverflow) 1992-02-24

Family

ID=16712449

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21796282A Granted JPS59107516A (ja) 1982-12-13 1982-12-13 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59107516A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2913987B2 (ja) * 1992-03-19 1999-06-28 ヤマハ株式会社 半導体装置の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2342544A1 (fr) * 1975-05-28 1977-09-23 Pechiney Aluminium Procede de fabrication de fils en alliage al-mg-si destines a la fabrication de cables aeriens de transport d'energie
JPS5454578A (en) * 1977-10-11 1979-04-28 Fujitsu Ltd Gas plasma etching method
JPS56135928A (en) * 1980-03-27 1981-10-23 Fujitsu Ltd Forming method for pattern of silicone resin

Also Published As

Publication number Publication date
JPS59107516A (ja) 1984-06-21

Similar Documents

Publication Publication Date Title
KR920001036B1 (ko) 높이가 고르지 않은 기판상에서 금속필라를 평탄화시키는 방법
JPH02267967A (ja) 半導体素子の製造方法
JP2002110654A (ja) 半導体装置の製造方法
US6133145A (en) Method to increase the etch rate selectivity between metal and photoresist via use of a plasma treatment
JPH0410211B2 (enrdf_load_stackoverflow)
JPS5748249A (en) Semiconductor device
JPH01192137A (ja) 半導体装置の製造方法
JP2545450B2 (ja) 半導体装置の製造方法
JPH058856B2 (enrdf_load_stackoverflow)
JPH0265256A (ja) 半導体装置の製造方法
JP2760426B2 (ja) レジスト膜のドライエツチング方法
JPS6387741A (ja) 半導体装置の製造方法
JPH06168919A (ja) 半導体装置のパターニング方法
JP3815413B2 (ja) 半導体装置の製造方法
KR960013140B1 (ko) 반도체 소자의 제조 방법
KR0172773B1 (ko) 반도체 소자의 패드 형성 방법
JPH0143453B2 (enrdf_load_stackoverflow)
KR0184939B1 (ko) 반도체 소자의 본딩패드 형성방법
JPS58202526A (ja) X線露光用マスクの製造方法
JPS59152629A (ja) パタン形成方法
JPS621230A (ja) パタ−ン形成方法
KR100252757B1 (ko) 금속패턴 형성방법
KR970006934B1 (ko) 금속패턴 형성방법
JPS60120526A (ja) 微細パタン形成法
JPH06244181A (ja) 半導体装置およびその製造方法