JPS59105647A - 電子ビーム露光方法 - Google Patents

電子ビーム露光方法

Info

Publication number
JPS59105647A
JPS59105647A JP57217177A JP21717782A JPS59105647A JP S59105647 A JPS59105647 A JP S59105647A JP 57217177 A JP57217177 A JP 57217177A JP 21717782 A JP21717782 A JP 21717782A JP S59105647 A JPS59105647 A JP S59105647A
Authority
JP
Japan
Prior art keywords
photomask
button
accuracy
monitor
electron beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57217177A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6344220B2 (enExample
Inventor
Kazuhiro Tanaka
和裕 田中
Hiroaki Morimoto
森本　博明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP57217177A priority Critical patent/JPS59105647A/ja
Publication of JPS59105647A publication Critical patent/JPS59105647A/ja
Publication of JPS6344220B2 publication Critical patent/JPS6344220B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electron Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP57217177A 1982-12-09 1982-12-09 電子ビーム露光方法 Granted JPS59105647A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57217177A JPS59105647A (ja) 1982-12-09 1982-12-09 電子ビーム露光方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57217177A JPS59105647A (ja) 1982-12-09 1982-12-09 電子ビーム露光方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP63082326A Division JPS63288018A (ja) 1988-04-05 1988-04-05 電子ビーム露光方法

Publications (2)

Publication Number Publication Date
JPS59105647A true JPS59105647A (ja) 1984-06-19
JPS6344220B2 JPS6344220B2 (enExample) 1988-09-02

Family

ID=16700065

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57217177A Granted JPS59105647A (ja) 1982-12-09 1982-12-09 電子ビーム露光方法

Country Status (1)

Country Link
JP (1) JPS59105647A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59124129A (ja) * 1982-12-29 1984-07-18 Fujitsu Ltd 電子ビ−ム露光方法
JPS63288018A (ja) * 1988-04-05 1988-11-25 Mitsubishi Electric Corp 電子ビーム露光方法
US5296917A (en) * 1992-01-21 1994-03-22 Mitsubishi Denki Kabushiki Kaisha Method of monitoring accuracy with which patterns are written
JP2011034120A (ja) * 2010-11-17 2011-02-17 Renesas Electronics Corp フォトマスクペア

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5396674A (en) * 1977-02-03 1978-08-24 Mitsubishi Electric Corp Photo mask
JPS5552143U (enExample) * 1978-10-04 1980-04-07

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5396674A (en) * 1977-02-03 1978-08-24 Mitsubishi Electric Corp Photo mask
JPS5552143U (enExample) * 1978-10-04 1980-04-07

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59124129A (ja) * 1982-12-29 1984-07-18 Fujitsu Ltd 電子ビ−ム露光方法
JPS63288018A (ja) * 1988-04-05 1988-11-25 Mitsubishi Electric Corp 電子ビーム露光方法
US5296917A (en) * 1992-01-21 1994-03-22 Mitsubishi Denki Kabushiki Kaisha Method of monitoring accuracy with which patterns are written
JP2011034120A (ja) * 2010-11-17 2011-02-17 Renesas Electronics Corp フォトマスクペア

Also Published As

Publication number Publication date
JPS6344220B2 (enExample) 1988-09-02

Similar Documents

Publication Publication Date Title
DE69817491T2 (de) Lithographisches belichtungsgerät mit einer ausserhalb der belichtungsachse liegenden ausrichtungsvorrichtung
US4423127A (en) Method of manufacturing a semiconductor device
JP3371852B2 (ja) レチクル
GB2287328A (en) Method for fabricating a photomask
DE69413465T2 (de) Belichtungsapparat und Verfahren zur Herstellung einer Vorrichtung unter Verwendung desselben
DE69527682T2 (de) Belichtungsapparat und Belichtungsverfahren
US4547446A (en) Motion measurement and alignment method and apparatus
JPS59105647A (ja) 電子ビーム露光方法
JPH0450730B2 (enExample)
US6097102A (en) Reticle, semiconductor wafer, and semiconductor chip
DE10338018B4 (de) Fotolitographisches Verfahren
JPS59160144A (ja) ホトマスク
JP3658142B2 (ja) 計測方法およびデバイス製造方法
JPS6074525A (ja) 半導体装置の製造方法
US5373232A (en) Method of and articles for accurately determining relative positions of lithographic artifacts
KR0146172B1 (ko) 노광장치의 렌즈 비점수차 측정방법
KR960002287B1 (ko) 정렬/노광장치의 스텝핑 정밀도 측정방법
JPH0258777B2 (enExample)
JPH03167817A (ja) 露光装置
JPS59124127A (ja) 電子線露光パタ−ンの評価方法
JPH03264838A (ja) レンズの解像力検査用パターン
DE10323378B3 (de) Maskenanordnung für lithografische Verfahren zum Strukturieren von Substraten
KR0134169Y1 (ko) 마스크 패턴
JPS63288018A (ja) 電子ビーム露光方法
JPH0743311A (ja) 表面状態検査装置及び該装置を備える露光装置