JPS59105647A - Photomask - Google Patents

Photomask

Info

Publication number
JPS59105647A
JPS59105647A JP57217177A JP21717782A JPS59105647A JP S59105647 A JPS59105647 A JP S59105647A JP 57217177 A JP57217177 A JP 57217177A JP 21717782 A JP21717782 A JP 21717782A JP S59105647 A JPS59105647 A JP S59105647A
Authority
JP
Japan
Prior art keywords
stripe
monitor
pattern
photomask
accuracy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57217177A
Other languages
Japanese (ja)
Other versions
JPS6344220B2 (en
Inventor
Kazuhiro Tanaka
和裕 田中
Hiroaki Morimoto
森本 博明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP57217177A priority Critical patent/JPS59105647A/en
Publication of JPS59105647A publication Critical patent/JPS59105647A/en
Publication of JPS6344220B2 publication Critical patent/JPS6344220B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/44Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To grasp accurately quantitatively the accuracy of a photomask produced by an EB exposure device and to make the production of highly accurate photomasks easier, by arranging monitor patterns, with which the accuracy of a normal pattern can be confirmed. CONSTITUTION:After one stripe 5 of a monitor pattern 4A is exposed about four points in a mask surface in accordance with EB data, the part of the monitor pattern 4 is drawn up, and this pattern is successively exposed one stripe by one stripe over the whole mask surface. After this exposure is completed, another monitor pattern 4B is again exposed. When such a method is used, accuracy of the connecting part of stripes, inside stripe, and stripe interface can be checked. A monitor pattern is exposed at the first and last of the exposure and, therefore, the long time drift quantity of a mask pattern can be understood from the displacement of the monitor patterns 4A and 4B.

Description

【発明の詳細な説明】 〔発明の技術分野〕 この発明は、写真製版工程に使用されるフォトマスクに
関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a photomask used in a photolithography process.

〔従来技術〕[Prior art]

集積回路などの半導体装置を製造する場合。 When manufacturing semiconductor devices such as integrated circuits.

一般にフォトリングラフィ技術によりバタン形成が行な
われる。
Batten formation is generally performed by photolithography technology.

近年この種の装置の集稍度が高くなる一方、バタン精度
、ポね合せ札度等、増々フォトマスクの品質精度が向上
し、製造工程も’JA 1tlt化している。このため
、微細加工が容易で筒精度、高速マスクメーキングが可
能な電子ビーム露光装置により作成されはじめている。
In recent years, as the density of this type of equipment has increased, the quality and accuracy of photomasks such as click accuracy and stacking accuracy have been increasing, and the manufacturing process has become more and more standardized. For this reason, electron beam exposure apparatuses are beginning to be used that allow easy microfabrication, cylindrical precision, and high-speed mask making.

電子ビーム市光装置(EB露露光装置上、KBテ゛−ク
ーに従い所定のスキャン幅で谷チップを連続的に露光す
ることにより、フォトマスク全作成している。
The entire photomask is fabricated by continuously exposing the valley chips with a predetermined scan width on an electron beam exposure device (EB exposure device) according to the KB procedure.

以下、従来のフォトマスクの製造および検査方法につい
て説明する。オ1図にその一例を示す。ラスタースキャ
ンタイプのV B ’73’光装置は図に示すように所
定のスキャン幅で、ラスクー(3)ラスキャンしつつ、
フォトマスクfi+全面ヲ露光しパターン(2)を形成
している。従って、1チツプのデークーは、何ストライ
プにも分割され露光されるので、必ずチップ内は、スト
ライプの継ぎ部分が問題となってくる。また従来の光力
法によるフォトマスク作成方法とは異り、毎回E Bデ
ーターに従り作成するのでバタンの保障が問題となって
いる。このような方法でフォトマスク全作成しているた
め、バタンの継ぎ都の検査は毎回不可欠であり、全スト
ライプについてそれが保障されなけれはならなかった。
A conventional photomask manufacturing and inspection method will be described below. An example is shown in Figure 1. The raster scan type VB '73' optical device performs raster scanning (3) with a predetermined scan width as shown in the figure.
The photomask fi+the entire surface is exposed to form a pattern (2). Therefore, since one chip of decoupling is divided into a number of stripes and exposed, the joints between the stripes always become a problem within the chip. Also, unlike the conventional photomask production method using the optical power method, the photomask is produced according to the EB data each time, so there is a problem of guaranteeing the impact. Since all photomasks are made in this way, it is essential to inspect the batten joints every time, and this must be ensured for all stripes.

さらに、従来の方法ではスキャン幅を正確に測る方法が
なく + l1ldJ定か不可能であった。
Furthermore, in the conventional method, there was no way to accurately measure the scan width, and it was impossible to determine the scan width.

以上のように従来のフォトマスク作成方法では、正1f
(1y’x継ぎ部分の測定および、スキャン幅の測定が
各マスクについて行なうことができず。
As mentioned above, in the conventional photomask manufacturing method, the positive 1f
(It was not possible to measure the 1y'x joint part and scan width for each mask.

精度のよいフォトマスクを作成することができないとい
う欠点があった。
The drawback was that it was not possible to create a highly accurate photomask.

〔発明の概容〕[Summary of the invention]

この発明は以上のような欠点を除去するだめになされた
もので、正規バタン以外の正規配列外ニモニターバタン
全配列させ、フォトマスクのj精度を確認できるフォト
マスクを提供することを目的としている。
This invention was made to eliminate the above-mentioned drawbacks, and aims to provide a photomask that can check the j accuracy of the photomask by arranging all the monitor buttons other than the regular ones. .

〔発明の実施例〕[Embodiments of the invention]

以下実施例について説明する。第2図はこの発明による
フォトマスク作成方法の一実施例を示す図である。1ず
、EBデーターに従いモニターバタンI41 k JM
画するが、モニターバタン(4)は(4A)と(4B)
に分割されておシ、(4A)のみを最初に露光する。
Examples will be described below. FIG. 2 is a diagram showing an embodiment of the photomask manufacturing method according to the present invention. 1. According to EB data, monitor button I41 k JM
However, the monitor button (4) is (4A) and (4B)
(4A) is first exposed.

モニタ−バタン+41id第2図のように構成されてお
り、スキャン・、吊ストライプ継ぎ部のj′l−1度が
チェックできるバタンにより144成され全チップバタ
ン(2)全作図完了後、(4A)のバタンと同様なバタ
ン(4B ) k作図する構成となっている。モニター
バタン(4A)の1ストライプ15)ヲマスク面内4個
所についてi、lに元完了後、モニターバタン(4A)
の部分を作図完了し1次に本バタンの1ストライプにつ
いて第2図に示したようにマスク生血に穫り順次露光し
ていく。F、Bデーグーに従い本バタン全部露光冗了置
再ひモ5ユタバタンI41(zJ光する。モニターバタ
ン(41のうち。
The monitor button + 41id is configured as shown in Fig. 2, and 144 steps are performed using the button that can check the j'l-1 degree of the hanging stripe joint. ) The configuration is such that the same type of baton (4B) k is drawn. 1 stripe of the monitor button (4A) 15) After completing the adjustment to i and l for the 4 locations on the mask surface, apply the monitor button (4A)
After completing the drawing, one stripe of the main button is exposed sequentially using a mask of raw blood as shown in Figure 2. According to F, B Daegu, this button is fully exposed, redundant, and repositioned.

上記で沙べた(4A)と同様なバタン(4B)の1スト
ライプtel k 露光する。
One stripe tel k of the same baton (4B) as that shown above (4A) is exposed.

金モニターバタン+41i−露光し、露光が完了する。The gold monitor button +41i- is exposed and the exposure is completed.

このような方法をとれば、ストライプの41部を必ずチ
ェックすることができ、−また、ストライプ内のおよび
、ストライプ界面の精度のチェックが可能である。モニ
ターバタン(4)は露光の最初と最後に露光されるので
(4A)(4B)の位冒すれからマスクバクンの長時間
ドリフト7iが)1′〆る。
By using such a method, it is possible to check all 41 parts of the stripe, and it is also possible to check the accuracy within the stripe and at the stripe interface. Since the monitor button (4) is exposed at the beginning and end of the exposure, the long-term drift 7i of the mask button (4A) and (4B) is reduced by 1'.

なお、上記実施例では、モニターバタン(4)ヲマスク
内の4個所に配置11シたが、これ以外の配置でもよく
、同様の効果を奏する。
In the above embodiment, the monitor buttons (4) are arranged at four locations 11 within the mask, but other arrangements may be used and the same effect will be achieved.

また、モニターバタン(4)は(4A) (4B)の2
分割による方法および2ストライブによる方法について
述べたが、これ以外でもよく同様の彷果ヲ奏スる。さら
にモニターバタン内のバタン形状について図に示すよう
なバタンについて述べ/ζが、これ以外でもよく同様の
効果を奏する。
Also, the monitor button (4) is (4A) (4B) 2
Although the method using division and the method using two stripes have been described, similar results can be obtained with other methods. Furthermore, regarding the shape of the button inside the monitor button, the shape of the button shown in the figure will be described.

〔発明の効果〕〔Effect of the invention〕

本発明によれば、EB露光装置dにより作成されたフォ
トマスクの精度を正aωlこ定量的に把握できるため嶋
精度なフォトマスクの作成が容易となった。特に、EB
w;光装置で問題となるスキャン幅、ストライプ継ぎ部
の精度がモニターバタンをチェックすることによシ、正
イ1fflに把握でき、装置の精度をチェックする上で
非常に骨動な手段である。モニターバタン?!?実際に
作図露光するのに要する時間は極めて短く5本パタンを
作図露光するのに何ら支障を期たさない。
According to the present invention, the accuracy of the photomask created by the EB exposure device d can be quantitatively grasped by the positive aωl, making it easy to create a photomask with perfect accuracy. In particular, E.B.
w; By checking the monitor button, the accuracy of the scan width and stripe joints, which are problems with optical devices, can be ascertained to a precise level, which is a very effective means of checking the accuracy of the device. . Monitor slam? ! ? The time required for actual drawing exposure is extremely short and there is no problem in drawing and exposing five patterns.

モニターバタンには、フォトマスクの1八ツの方にある
ため、クエハーへの焼付転写fこは影響をおよほさない
Since the monitor button is located on the 18th side of the photomask, the printing transfer to the wafer has no effect.

他の実施例について説明する。上記説明ではKB露光装
置についての7オトマスク(′i i 方法について述
べたが、ステップアンドリピート方式によるフォトマス
ク作成方法について以下に説明する。ステップアンドリ
ピート方式では第3図に示すようにあらかじめ本バタン
の10倍の大きさを有するレチクル(6)を作成し、縮
少レンズにより 扇に縮少しマスク全面に渡り、ステッ
プアンドリピートしている。この方法においても上記説
明で述べたと同様製造装置の精度チェックは各マスクで
行なうことが不可能であった。
Other embodiments will be described. In the above explanation, we have described the 7-oto-mask ('i i method) for KB exposure equipment, but we will explain below about the photomask manufacturing method using the step-and-repeat method.In the step-and-repeat method, as shown in Figure 3, A reticle (6) with a size 10 times that of the reticle is created, and the reticle (6) is reduced to a fan using a reduction lens and step-and-repeat is performed over the entire mask surface.This method also requires the precision of the manufacturing equipment as described above. It was not possible to perform a check on each mask.

ステップアンドリピート方法においも、製造装置の精度
をチェックするため、あらかじめオ番図に示すように精
度チェック用のレチクル(7)を作成しておきフォトマ
スクの隅に焼付露光する。
In the step-and-repeat method as well, in order to check the accuracy of the manufacturing equipment, a reticle (7) for checking the accuracy is prepared in advance as shown in the diagram and is printed and exposed on the corner of the photomask.

レチクルに自己筒するバタンとしては、たとえ1ゲh<
tj 少4にチェック用バタン、トータルピンffニッ
クバタン、ディストーションチェック用パクン等のモニ
ターバタン(8)を配置シておく。
As a self-cylindrical slam on the reticle, even if 1 game h<
tj Place monitor buttons (8) such as check buttons, total pin ff nick buttons, and distortion check buttons on the 4th floor.

このようにすれば、ステップアンドリピート方式により
作成されたフォトマスクの精度を一6マスクについて正
(1π1こ把握できるため、筒精度な7オトマスクの作
成が可能となる。
In this way, the accuracy of the photomask created by the step-and-repeat method can be determined to be positive (1π1) for each 16 masks, so it is possible to create 7 photomasks with cylindrical accuracy.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来のEB露光装置による油Bフォトマスクの
作成方法および7オトマスクケ示す説明図、第2図は本
発明によるEB露元装置の描画方法および、フォトマス
クを示す説明図。 第8図は従来のステップアンドリピート方式によるフォ
トマスクの作成方法およびフォトマスクを示す説明図、
第4図は本発明によるステップアンドリピート方式のフ
ォトマスクの作成方法および)オドマスクを示す説明図
である。 図において11)はフォトマスク、)2)は正規バタン
、(3)はラスター、(4)はモニターバタン、(4A
)1、4B )はモニターバタン内のチェックバタン+
51 fjストライプである。 なお図中間−符号は、同一または4・(」歯部分を示す
。 代理人  烏 野  信 − 第1ν1 第2図 4A    4B 第3図 第4図 手続補正書(自発) 特許庁長官殿 1、事件の表示    ’t、’+1gri昭57−2
17177 号2、発明の名称 フォトマスク 3、補正をする者 代表者片山仁へ部 4、代理人 5 補正の対象 明細書の発明の詳細な説明の欄 61IM正の内容 qλ明細11)をつぎのとおり訂正する。
FIG. 1 is an explanatory diagram showing a method for creating an oil B photomask using a conventional EB exposure device and seven otomasks, and FIG. 2 is an explanatory diagram showing a drawing method using an EB exposure device and a photomask according to the present invention. FIG. 8 is an explanatory diagram showing a conventional step-and-repeat method for making a photomask and a photomask;
FIG. 4 is an explanatory diagram showing a step-and-repeat photomask manufacturing method and an odd mask according to the present invention. In the figure, 11) is a photomask, )2) is a regular button, (3) is a raster button, (4) is a monitor button, (4A
) 1, 4B ) is the check button inside the monitor button +
51 fj stripe. Note that the numbers in the middle of the figures indicate the same or 4.('' tooth part. Agent Shin Karasuno - No. 1 ν1 Figure 2 4A 4B Figure 3 Figure 4 Procedural Amendment (Voluntary) Commissioner of the Japan Patent Office 1, Case Display 't,'+1gri1984-2
17177 No. 2, Name of the invention Photomask 3, Person making the amendment Representative: Hitoshi Katayama Department 4, Agent 5 Detailed description of the invention column 61 of the specification subject to amendment IM Correct contents qλ Specification 11) as follows: Correct as shown.

Claims (1)

【特許請求の範囲】[Claims] 正規バタンか配列されたフォトマスクにおいて、正規バ
タン以外に、正規バタンの(h度ヲイ1ζ認できるモニ
ターバタンを有していることを特徴とするフォトマスク
A photomask in which regular tabs are arranged, characterized in that the photomask has, in addition to the regular tabs, a monitor button that can be recognized every inch of the regular tabs.
JP57217177A 1982-12-09 1982-12-09 Photomask Granted JPS59105647A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57217177A JPS59105647A (en) 1982-12-09 1982-12-09 Photomask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57217177A JPS59105647A (en) 1982-12-09 1982-12-09 Photomask

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP63082326A Division JPS63288018A (en) 1988-04-05 1988-04-05 Electron beam exposure method

Publications (2)

Publication Number Publication Date
JPS59105647A true JPS59105647A (en) 1984-06-19
JPS6344220B2 JPS6344220B2 (en) 1988-09-02

Family

ID=16700065

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57217177A Granted JPS59105647A (en) 1982-12-09 1982-12-09 Photomask

Country Status (1)

Country Link
JP (1) JPS59105647A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59124129A (en) * 1982-12-29 1984-07-18 Fujitsu Ltd Electron beam exposure
JPS63288018A (en) * 1988-04-05 1988-11-25 Mitsubishi Electric Corp Electron beam exposure method
US5296917A (en) * 1992-01-21 1994-03-22 Mitsubishi Denki Kabushiki Kaisha Method of monitoring accuracy with which patterns are written
JP2011034120A (en) * 2010-11-17 2011-02-17 Renesas Electronics Corp Photomask pair

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5396674A (en) * 1977-02-03 1978-08-24 Mitsubishi Electric Corp Photo mask
JPS5552143U (en) * 1978-10-04 1980-04-07

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5396674A (en) * 1977-02-03 1978-08-24 Mitsubishi Electric Corp Photo mask
JPS5552143U (en) * 1978-10-04 1980-04-07

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59124129A (en) * 1982-12-29 1984-07-18 Fujitsu Ltd Electron beam exposure
JPH0544172B2 (en) * 1982-12-29 1993-07-05 Fujitsu Ltd
JPS63288018A (en) * 1988-04-05 1988-11-25 Mitsubishi Electric Corp Electron beam exposure method
JPH0442819B2 (en) * 1988-04-05 1992-07-14 Mitsubishi Electric Corp
US5296917A (en) * 1992-01-21 1994-03-22 Mitsubishi Denki Kabushiki Kaisha Method of monitoring accuracy with which patterns are written
JP2011034120A (en) * 2010-11-17 2011-02-17 Renesas Electronics Corp Photomask pair

Also Published As

Publication number Publication date
JPS6344220B2 (en) 1988-09-02

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