JPS59104796A - 不揮発性半導体メモリ装置 - Google Patents
不揮発性半導体メモリ装置Info
- Publication number
- JPS59104796A JPS59104796A JP57213001A JP21300182A JPS59104796A JP S59104796 A JPS59104796 A JP S59104796A JP 57213001 A JP57213001 A JP 57213001A JP 21300182 A JP21300182 A JP 21300182A JP S59104796 A JPS59104796 A JP S59104796A
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- transistor
- memory
- mode
- writing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 6
- 238000010586 diagram Methods 0.000 description 10
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 10
- 230000014759 maintenance of location Effects 0.000 description 6
- 230000005669 field effect Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 208000019901 Anxiety disease Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000036506 anxiety Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
Landscapes
- Read Only Memory (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57213001A JPS59104796A (ja) | 1982-12-03 | 1982-12-03 | 不揮発性半導体メモリ装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57213001A JPS59104796A (ja) | 1982-12-03 | 1982-12-03 | 不揮発性半導体メモリ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59104796A true JPS59104796A (ja) | 1984-06-16 |
JPH041437B2 JPH041437B2 (enrdf_load_stackoverflow) | 1992-01-13 |
Family
ID=16631834
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57213001A Granted JPS59104796A (ja) | 1982-12-03 | 1982-12-03 | 不揮発性半導体メモリ装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59104796A (enrdf_load_stackoverflow) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0215497A (ja) * | 1988-04-26 | 1990-01-19 | Sgs Thomson Microelectron Sa | 1つのメモリセルに複数のデータビットを有する電気的にプログラム可能なメモリ |
JPH02227900A (ja) * | 1989-02-28 | 1990-09-11 | Fujitsu Ltd | 半導体記憶装置 |
US7020037B2 (en) | 2004-02-06 | 2006-03-28 | Sharp Kabushiki Kaisha | Nonvolatile semiconductor memory device |
JP2007301755A (ja) * | 2006-05-09 | 2007-11-22 | H Concept Kk | 定規 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS558696A (en) * | 1978-06-30 | 1980-01-22 | Siemens Ag | Nonnvolatile memory |
-
1982
- 1982-12-03 JP JP57213001A patent/JPS59104796A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS558696A (en) * | 1978-06-30 | 1980-01-22 | Siemens Ag | Nonnvolatile memory |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0215497A (ja) * | 1988-04-26 | 1990-01-19 | Sgs Thomson Microelectron Sa | 1つのメモリセルに複数のデータビットを有する電気的にプログラム可能なメモリ |
JPH02227900A (ja) * | 1989-02-28 | 1990-09-11 | Fujitsu Ltd | 半導体記憶装置 |
US7020037B2 (en) | 2004-02-06 | 2006-03-28 | Sharp Kabushiki Kaisha | Nonvolatile semiconductor memory device |
JP2007301755A (ja) * | 2006-05-09 | 2007-11-22 | H Concept Kk | 定規 |
Also Published As
Publication number | Publication date |
---|---|
JPH041437B2 (enrdf_load_stackoverflow) | 1992-01-13 |
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