JPS59104141A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS59104141A
JPS59104141A JP57215232A JP21523282A JPS59104141A JP S59104141 A JPS59104141 A JP S59104141A JP 57215232 A JP57215232 A JP 57215232A JP 21523282 A JP21523282 A JP 21523282A JP S59104141 A JPS59104141 A JP S59104141A
Authority
JP
Japan
Prior art keywords
fused
oxygen
semiconductor layer
film
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57215232A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6412097B2 (enrdf_load_stackoverflow
Inventor
Ryoichi Mukai
良一 向井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57215232A priority Critical patent/JPS59104141A/ja
Publication of JPS59104141A publication Critical patent/JPS59104141A/ja
Publication of JPS6412097B2 publication Critical patent/JPS6412097B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP57215232A 1982-12-07 1982-12-07 半導体装置の製造方法 Granted JPS59104141A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57215232A JPS59104141A (ja) 1982-12-07 1982-12-07 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57215232A JPS59104141A (ja) 1982-12-07 1982-12-07 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59104141A true JPS59104141A (ja) 1984-06-15
JPS6412097B2 JPS6412097B2 (enrdf_load_stackoverflow) 1989-02-28

Family

ID=16668894

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57215232A Granted JPS59104141A (ja) 1982-12-07 1982-12-07 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59104141A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6267834A (ja) * 1985-09-20 1987-03-27 Hitachi Ltd レ−ザ処理方法
JPH06302603A (ja) * 1993-03-26 1994-10-28 Hitachi Ltd Ｉｃ素子

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5917265A (ja) * 1982-07-20 1984-01-28 Toshiba Corp 半導体装置の製造方法およびその製造装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5917265A (ja) * 1982-07-20 1984-01-28 Toshiba Corp 半導体装置の製造方法およびその製造装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6267834A (ja) * 1985-09-20 1987-03-27 Hitachi Ltd レ−ザ処理方法
JPH06302603A (ja) * 1993-03-26 1994-10-28 Hitachi Ltd Ｉｃ素子

Also Published As

Publication number Publication date
JPS6412097B2 (enrdf_load_stackoverflow) 1989-02-28

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