JPS59104111A - 酸化鉄磁性薄膜の製造方法 - Google Patents
酸化鉄磁性薄膜の製造方法Info
- Publication number
- JPS59104111A JPS59104111A JP21378882A JP21378882A JPS59104111A JP S59104111 A JPS59104111 A JP S59104111A JP 21378882 A JP21378882 A JP 21378882A JP 21378882 A JP21378882 A JP 21378882A JP S59104111 A JPS59104111 A JP S59104111A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- substrate
- coercive force
- sputtering
- auxiliary electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Compounds Of Iron (AREA)
- Physical Vapour Deposition (AREA)
- Thin Magnetic Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21378882A JPS59104111A (ja) | 1982-12-06 | 1982-12-06 | 酸化鉄磁性薄膜の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21378882A JPS59104111A (ja) | 1982-12-06 | 1982-12-06 | 酸化鉄磁性薄膜の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59104111A true JPS59104111A (ja) | 1984-06-15 |
| JPS616532B2 JPS616532B2 (OSRAM) | 1986-02-27 |
Family
ID=16645056
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21378882A Granted JPS59104111A (ja) | 1982-12-06 | 1982-12-06 | 酸化鉄磁性薄膜の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59104111A (OSRAM) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02197556A (ja) * | 1989-01-27 | 1990-08-06 | Tdk Corp | マグネタイト膜の製造方法および製造装置 |
| US5316645A (en) * | 1990-08-07 | 1994-05-31 | Canon Kabushiki Kaisha | Plasma processing apparatus |
| US5580805A (en) * | 1993-09-10 | 1996-12-03 | Sony Corporation | Semiconductor device having various threshold voltages and manufacturing same |
-
1982
- 1982-12-06 JP JP21378882A patent/JPS59104111A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02197556A (ja) * | 1989-01-27 | 1990-08-06 | Tdk Corp | マグネタイト膜の製造方法および製造装置 |
| US5316645A (en) * | 1990-08-07 | 1994-05-31 | Canon Kabushiki Kaisha | Plasma processing apparatus |
| US5580805A (en) * | 1993-09-10 | 1996-12-03 | Sony Corporation | Semiconductor device having various threshold voltages and manufacturing same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS616532B2 (OSRAM) | 1986-02-27 |
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