JPS5895698A - ＩｎＰの結晶成長法及び成長装置 - Google Patents
ＩｎＰの結晶成長法及び成長装置Info
- Publication number
- JPS5895698A JPS5895698A JP19428881A JP19428881A JPS5895698A JP S5895698 A JPS5895698 A JP S5895698A JP 19428881 A JP19428881 A JP 19428881A JP 19428881 A JP19428881 A JP 19428881A JP S5895698 A JPS5895698 A JP S5895698A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- growth
- vapor pressure
- inp
- growing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 51
- 238000000034 method Methods 0.000 title claims description 19
- 238000002844 melting Methods 0.000 claims abstract description 16
- 230000008018 melting Effects 0.000 claims abstract description 16
- 238000004857 zone melting Methods 0.000 claims abstract description 7
- 238000002109 crystal growth method Methods 0.000 claims 1
- 239000003708 ampul Substances 0.000 abstract description 7
- 239000000203 mixture Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 238000010494 dissociation reaction Methods 0.000 description 4
- 230000005593 dissociations Effects 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000007670 refining Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 238000004854 X-ray topography Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910000953 kanthal Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19428881A JPS5895698A (ja) | 1981-12-01 | 1981-12-01 | ＩｎＰの結晶成長法及び成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19428881A JPS5895698A (ja) | 1981-12-01 | 1981-12-01 | ＩｎＰの結晶成長法及び成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5895698A true JPS5895698A (ja) | 1983-06-07 |
| JPS612638B2 JPS612638B2 (enExample) | 1986-01-27 |
Family
ID=16322101
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19428881A Granted JPS5895698A (ja) | 1981-12-01 | 1981-12-01 | ＩｎＰの結晶成長法及び成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5895698A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107313110A (zh) * | 2017-06-27 | 2017-11-03 | 台山市华兴光电科技有限公司 | 一种p型磷化铟单晶制备配方及制备方法 |
-
1981
- 1981-12-01 JP JP19428881A patent/JPS5895698A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107313110A (zh) * | 2017-06-27 | 2017-11-03 | 台山市华兴光电科技有限公司 | 一种p型磷化铟单晶制备配方及制备方法 |
| CN107313110B (zh) * | 2017-06-27 | 2020-06-09 | 台山市华兴光电科技有限公司 | 一种p型磷化铟单晶制备配方及制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS612638B2 (enExample) | 1986-01-27 |
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