JPS5894703A - 透明電極の製造方法およびその製造装置 - Google Patents

透明電極の製造方法およびその製造装置

Info

Publication number
JPS5894703A
JPS5894703A JP19328981A JP19328981A JPS5894703A JP S5894703 A JPS5894703 A JP S5894703A JP 19328981 A JP19328981 A JP 19328981A JP 19328981 A JP19328981 A JP 19328981A JP S5894703 A JPS5894703 A JP S5894703A
Authority
JP
Japan
Prior art keywords
transparent electrode
gas
sputtering
flow rate
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19328981A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0375967B2 (enrdf_load_stackoverflow
Inventor
隆夫 近村
矢野 航作
豊 宮田
太田 善夫
慎司 藤原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP19328981A priority Critical patent/JPS5894703A/ja
Publication of JPS5894703A publication Critical patent/JPS5894703A/ja
Publication of JPH0375967B2 publication Critical patent/JPH0375967B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Surface Treatment Of Glass (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Non-Insulated Conductors (AREA)
  • Manufacturing Of Electric Cables (AREA)
JP19328981A 1981-11-30 1981-11-30 透明電極の製造方法およびその製造装置 Granted JPS5894703A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19328981A JPS5894703A (ja) 1981-11-30 1981-11-30 透明電極の製造方法およびその製造装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19328981A JPS5894703A (ja) 1981-11-30 1981-11-30 透明電極の製造方法およびその製造装置

Publications (2)

Publication Number Publication Date
JPS5894703A true JPS5894703A (ja) 1983-06-06
JPH0375967B2 JPH0375967B2 (enrdf_load_stackoverflow) 1991-12-04

Family

ID=16305435

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19328981A Granted JPS5894703A (ja) 1981-11-30 1981-11-30 透明電極の製造方法およびその製造装置

Country Status (1)

Country Link
JP (1) JPS5894703A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0247255A (ja) * 1988-08-05 1990-02-16 Matsushita Electric Ind Co Ltd 酸化物薄膜製造法
WO2012157202A1 (ja) * 2011-05-13 2012-11-22 シャープ株式会社 薄膜形成方法
KR20170108819A (ko) 2016-03-17 2017-09-27 시바우라 메카트로닉스 가부시끼가이샤 성막 장치 및 성막 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51116999A (en) * 1975-04-08 1976-10-14 Toppan Printing Co Ltd Process for manufacturing transparent conductive plastic
JPS53118417A (en) * 1977-03-25 1978-10-16 Asahi Glass Co Ltd Production of glass with transparent* electrically conductive coat of sno2
JPS56130009A (en) * 1980-03-17 1981-10-12 Sharp Kk Method of producing transparent conductive film

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51116999A (en) * 1975-04-08 1976-10-14 Toppan Printing Co Ltd Process for manufacturing transparent conductive plastic
JPS53118417A (en) * 1977-03-25 1978-10-16 Asahi Glass Co Ltd Production of glass with transparent* electrically conductive coat of sno2
JPS56130009A (en) * 1980-03-17 1981-10-12 Sharp Kk Method of producing transparent conductive film

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0247255A (ja) * 1988-08-05 1990-02-16 Matsushita Electric Ind Co Ltd 酸化物薄膜製造法
WO2012157202A1 (ja) * 2011-05-13 2012-11-22 シャープ株式会社 薄膜形成方法
KR20170108819A (ko) 2016-03-17 2017-09-27 시바우라 메카트로닉스 가부시끼가이샤 성막 장치 및 성막 방법
US10260145B2 (en) 2016-03-17 2019-04-16 Shibaura Mechatronics Corporation Film formation apparatus and film formation method

Also Published As

Publication number Publication date
JPH0375967B2 (enrdf_load_stackoverflow) 1991-12-04

Similar Documents

Publication Publication Date Title
JPH03155625A (ja) プラズマcvd膜の製造方法
US20100282598A1 (en) Method for controlling a reactive-high-power pulsed magnetron sputter process and corresponding device
US4579639A (en) Method of sensing the amount of a thin film deposited during an ion plating process
Maniv et al. Surface oxidation kinetics of sputtering targets
JPS5894703A (ja) 透明電極の製造方法およびその製造装置
CN117418207B (zh) 一种三靶高功率脉冲磁控共溅射方法
JP4360716B2 (ja) 銅薄膜製造方法、及びその方法に用いるスパッタ装置
JP2002180247A (ja) 透明導電積層体の製造方法および製造装置
JPS61193441A (ja) 金属薄膜の形成方法およびその形成装置
JPS58167767A (ja) 薄膜形成方法
JPH04136165A (ja) 反応性ガス導入型成膜装置
JP2894564B2 (ja) 連続透明導電性薄膜作成装置
JPS596376A (ja) スパツタ装置
JPS63176465A (ja) 反応性スパツタリング成膜方法
JP2000107587A (ja) ベルジャ(真空成膜チャンバ又は容器)内のガス圧を校正する方法と装置
Volrabova et al. Piezoelectric Microbalance and its use in the Study of Volatile Inhibitors
US3437577A (en) Method of fabricating uniform rare earth iron garnet thin films by sputtering
JPH02157123A (ja) チタン酸バリウム薄膜の製造方法
JP2584633B2 (ja) 超電導薄膜作成装置
JPH0247255A (ja) 酸化物薄膜製造法
JPH048506B2 (enrdf_load_stackoverflow)
JPH0365501A (ja) 酸化物薄膜の作製方法
JPS63281407A (ja) 抵抗体の製造方法
JPS6130403B2 (enrdf_load_stackoverflow)
JPH04346670A (ja) バイアスプラズマcvd装置およびその成膜方法