JPS5893372A - Ｍｏｓ型集積回路 - Google Patents

Ｍｏｓ型集積回路

Info

Publication number
JPS5893372A
JPS5893372A JP56192218A JP19221881A JPS5893372A JP S5893372 A JPS5893372 A JP S5893372A JP 56192218 A JP56192218 A JP 56192218A JP 19221881 A JP19221881 A JP 19221881A JP S5893372 A JPS5893372 A JP S5893372A
Authority
JP
Japan
Prior art keywords
mos
insulating film
semiconductor
transistor
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56192218A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6253951B2 (enExample
Inventor
Hirosuke Hatano
裕 波多野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56192218A priority Critical patent/JPS5893372A/ja
Publication of JPS5893372A publication Critical patent/JPS5893372A/ja
Publication of JPS6253951B2 publication Critical patent/JPS6253951B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/8311—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having different channel structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/83138—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having different shapes or dimensions of their gate conductors

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP56192218A 1981-11-30 1981-11-30 Ｍｏｓ型集積回路 Granted JPS5893372A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56192218A JPS5893372A (ja) 1981-11-30 1981-11-30 Ｍｏｓ型集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56192218A JPS5893372A (ja) 1981-11-30 1981-11-30 Ｍｏｓ型集積回路

Publications (2)

Publication Number Publication Date
JPS5893372A true JPS5893372A (ja) 1983-06-03
JPS6253951B2 JPS6253951B2 (enExample) 1987-11-12

Family

ID=16287621

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56192218A Granted JPS5893372A (ja) 1981-11-30 1981-11-30 Ｍｏｓ型集積回路

Country Status (1)

Country Link
JP (1) JPS5893372A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05175237A (ja) * 1991-05-31 1993-07-13 American Teleph & Telegr Co <Att> 集積回路デバイスの製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56144530A (en) * 1980-04-10 1981-11-10 Fujitsu Ltd Manufacture of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56144530A (en) * 1980-04-10 1981-11-10 Fujitsu Ltd Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05175237A (ja) * 1991-05-31 1993-07-13 American Teleph & Telegr Co <Att> 集積回路デバイスの製造方法

Also Published As

Publication number Publication date
JPS6253951B2 (enExample) 1987-11-12

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