JPS5893289A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS5893289A JPS5893289A JP19212481A JP19212481A JPS5893289A JP S5893289 A JPS5893289 A JP S5893289A JP 19212481 A JP19212481 A JP 19212481A JP 19212481 A JP19212481 A JP 19212481A JP S5893289 A JPS5893289 A JP S5893289A
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicon nitride
- forming
- nitride film
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000004065 semiconductor Substances 0.000 title claims description 4
- 150000002500 ions Chemical class 0.000 claims abstract description 7
- 238000010438 heat treatment Methods 0.000 claims abstract description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 23
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 3
- 238000005468 ion implantation Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 4
- 239000012535 impurity Substances 0.000 abstract description 2
- 239000007943 implant Substances 0.000 abstract 1
- 230000007547 defect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000005527 interface trap Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19212481A JPS5893289A (ja) | 1981-11-30 | 1981-11-30 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19212481A JPS5893289A (ja) | 1981-11-30 | 1981-11-30 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5893289A true JPS5893289A (ja) | 1983-06-02 |
| JPS6262070B2 JPS6262070B2 (de) | 1987-12-24 |
Family
ID=16286068
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19212481A Granted JPS5893289A (ja) | 1981-11-30 | 1981-11-30 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5893289A (de) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58212180A (ja) * | 1982-06-03 | 1983-12-09 | Matsushita Electronics Corp | 不揮発性記憶装置およびその製造方法 |
| JPS5969973A (ja) * | 1982-10-15 | 1984-04-20 | Nec Corp | 半導体装置 |
| JPS603159A (ja) * | 1983-06-21 | 1985-01-09 | Matsushita Electronics Corp | 不揮発性記憶装置の製造方法 |
| US5470771A (en) * | 1989-04-28 | 1995-11-28 | Nippondenso Co., Ltd. | Method of manufacturing a floating gate memory device |
| US6373093B2 (en) | 1989-04-28 | 2002-04-16 | Nippondenso Corporation | Semiconductor memory device and method of manufacturing the same |
| WO2004021449A1 (ja) * | 2002-08-30 | 2004-03-11 | Fasl Llc | 半導体記憶装置及びその製造方法 |
-
1981
- 1981-11-30 JP JP19212481A patent/JPS5893289A/ja active Granted
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58212180A (ja) * | 1982-06-03 | 1983-12-09 | Matsushita Electronics Corp | 不揮発性記憶装置およびその製造方法 |
| JPH0334672B2 (de) * | 1982-06-03 | 1991-05-23 | Matsushita Electronics Corp | |
| JPS5969973A (ja) * | 1982-10-15 | 1984-04-20 | Nec Corp | 半導体装置 |
| JPS603159A (ja) * | 1983-06-21 | 1985-01-09 | Matsushita Electronics Corp | 不揮発性記憶装置の製造方法 |
| US5470771A (en) * | 1989-04-28 | 1995-11-28 | Nippondenso Co., Ltd. | Method of manufacturing a floating gate memory device |
| US6365458B1 (en) | 1989-04-28 | 2002-04-02 | Nippondenso Co., Ltd. | Semiconductor memory device and method of manufacturing the same |
| US6373093B2 (en) | 1989-04-28 | 2002-04-16 | Nippondenso Corporation | Semiconductor memory device and method of manufacturing the same |
| US6525400B2 (en) | 1989-04-28 | 2003-02-25 | Denso Corporation | Semiconductor memory device and method of manufacturing the same |
| WO2004021449A1 (ja) * | 2002-08-30 | 2004-03-11 | Fasl Llc | 半導体記憶装置及びその製造方法 |
| US7253046B2 (en) | 2002-08-30 | 2007-08-07 | Spansion Llc. | Semiconductor memory device and manufacturing method thereof |
| US7410857B2 (en) | 2002-08-30 | 2008-08-12 | Spansion Llc. | Semiconductor memory device and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6262070B2 (de) | 1987-12-24 |
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