JPS5893272A - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JPS5893272A JPS5893272A JP56192183A JP19218381A JPS5893272A JP S5893272 A JPS5893272 A JP S5893272A JP 56192183 A JP56192183 A JP 56192183A JP 19218381 A JP19218381 A JP 19218381A JP S5893272 A JPS5893272 A JP S5893272A
- Authority
- JP
- Japan
- Prior art keywords
- type
- region
- film
- transistor
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 8
- 239000013078 crystal Substances 0.000 claims abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 abstract description 7
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 150000002500 ions Chemical class 0.000 abstract description 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000003213 activating effect Effects 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000004904 shortening Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000000969 carrier Substances 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 210000000078 claw Anatomy 0.000 description 2
- 235000009508 confectionery Nutrition 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 244000061354 Manilkara achras Species 0.000 description 1
- 229910007277 Si3 N4 Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- MKXKFYHWDHIYRV-UHFFFAOYSA-N flutamide Chemical compound CC(C)C(=O)NC1=CC=C([N+]([O-])=O)C(C(F)(F)F)=C1 MKXKFYHWDHIYRV-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures
Landscapes
- Bipolar Transistors (AREA)
- Die Bonding (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56192183A JPS5893272A (ja) | 1981-11-30 | 1981-11-30 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56192183A JPS5893272A (ja) | 1981-11-30 | 1981-11-30 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5893272A true JPS5893272A (ja) | 1983-06-02 |
| JPH0418458B2 JPH0418458B2 (enrdf_load_stackoverflow) | 1992-03-27 |
Family
ID=16287053
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56192183A Granted JPS5893272A (ja) | 1981-11-30 | 1981-11-30 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5893272A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7262484B2 (en) | 2005-05-09 | 2007-08-28 | International Business Machines Corporation | Structure and method for performance improvement in vertical bipolar transistors |
-
1981
- 1981-11-30 JP JP56192183A patent/JPS5893272A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7262484B2 (en) | 2005-05-09 | 2007-08-28 | International Business Machines Corporation | Structure and method for performance improvement in vertical bipolar transistors |
| US7898061B2 (en) | 2005-05-09 | 2011-03-01 | International Business Machines Corporation | Structure for performance improvement in vertical bipolar transistors |
| US7932155B2 (en) | 2005-05-09 | 2011-04-26 | International Business Machines Corporation | Structure and method for performance improvement in vertical bipolar transistors |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0418458B2 (enrdf_load_stackoverflow) | 1992-03-27 |
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