JPS5887870A - サイリスタの製造方法 - Google Patents

サイリスタの製造方法

Info

Publication number
JPS5887870A
JPS5887870A JP56186348A JP18634881A JPS5887870A JP S5887870 A JPS5887870 A JP S5887870A JP 56186348 A JP56186348 A JP 56186348A JP 18634881 A JP18634881 A JP 18634881A JP S5887870 A JPS5887870 A JP S5887870A
Authority
JP
Japan
Prior art keywords
layer
wafer
thyristor
grinding
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56186348A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0136269B2 (enrdf_load_stackoverflow
Inventor
Kenji Hideshima
秀島　研二
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56186348A priority Critical patent/JPS5887870A/ja
Publication of JPS5887870A publication Critical patent/JPS5887870A/ja
Publication of JPH0136269B2 publication Critical patent/JPH0136269B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/01—Manufacture or treatment
    • H10D18/031—Manufacture or treatment of lateral or planar thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

Landscapes

  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
JP56186348A 1981-11-20 1981-11-20 サイリスタの製造方法 Granted JPS5887870A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56186348A JPS5887870A (ja) 1981-11-20 1981-11-20 サイリスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56186348A JPS5887870A (ja) 1981-11-20 1981-11-20 サイリスタの製造方法

Publications (2)

Publication Number Publication Date
JPS5887870A true JPS5887870A (ja) 1983-05-25
JPH0136269B2 JPH0136269B2 (enrdf_load_stackoverflow) 1989-07-31

Family

ID=16186776

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56186348A Granted JPS5887870A (ja) 1981-11-20 1981-11-20 サイリスタの製造方法

Country Status (1)

Country Link
JP (1) JPS5887870A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62158364A (ja) * 1986-01-07 1987-07-14 Toshiba Corp プレ−ナ型サイリスタの製造方法
JP2000195870A (ja) * 1998-12-29 2000-07-14 Asea Brown Boveri Ag 半導体素子及び製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49124980A (enrdf_load_stackoverflow) * 1973-04-02 1974-11-29
JPS5642369A (en) * 1979-09-12 1981-04-20 Mitsubishi Electric Corp Manufacture of thyristor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49124980A (enrdf_load_stackoverflow) * 1973-04-02 1974-11-29
JPS5642369A (en) * 1979-09-12 1981-04-20 Mitsubishi Electric Corp Manufacture of thyristor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62158364A (ja) * 1986-01-07 1987-07-14 Toshiba Corp プレ−ナ型サイリスタの製造方法
JP2000195870A (ja) * 1998-12-29 2000-07-14 Asea Brown Boveri Ag 半導体素子及び製造方法

Also Published As

Publication number Publication date
JPH0136269B2 (enrdf_load_stackoverflow) 1989-07-31

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