JPH0136269B2 - - Google Patents
Info
- Publication number
- JPH0136269B2 JPH0136269B2 JP56186348A JP18634881A JPH0136269B2 JP H0136269 B2 JPH0136269 B2 JP H0136269B2 JP 56186348 A JP56186348 A JP 56186348A JP 18634881 A JP18634881 A JP 18634881A JP H0136269 B2 JPH0136269 B2 JP H0136269B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor region
- layer
- wafer
- conductivity type
- diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/01—Manufacture or treatment
- H10D18/031—Manufacture or treatment of lateral or planar thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
Landscapes
- Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thyristors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56186348A JPS5887870A (ja) | 1981-11-20 | 1981-11-20 | サイリスタの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56186348A JPS5887870A (ja) | 1981-11-20 | 1981-11-20 | サイリスタの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5887870A JPS5887870A (ja) | 1983-05-25 |
| JPH0136269B2 true JPH0136269B2 (enrdf_load_stackoverflow) | 1989-07-31 |
Family
ID=16186776
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56186348A Granted JPS5887870A (ja) | 1981-11-20 | 1981-11-20 | サイリスタの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5887870A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62158364A (ja) * | 1986-01-07 | 1987-07-14 | Toshiba Corp | プレ−ナ型サイリスタの製造方法 |
| DE19860581A1 (de) * | 1998-12-29 | 2000-07-06 | Asea Brown Boveri | Halbleiterelement und Verfahren zur Herstellung |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49124980A (enrdf_load_stackoverflow) * | 1973-04-02 | 1974-11-29 | ||
| JPS5642369A (en) * | 1979-09-12 | 1981-04-20 | Mitsubishi Electric Corp | Manufacture of thyristor device |
-
1981
- 1981-11-20 JP JP56186348A patent/JPS5887870A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5887870A (ja) | 1983-05-25 |
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