JPS5887731A - 画像記録または表示用陰極線管を具える装置 - Google Patents

画像記録または表示用陰極線管を具える装置

Info

Publication number
JPS5887731A
JPS5887731A JP57190682A JP19068282A JPS5887731A JP S5887731 A JPS5887731 A JP S5887731A JP 57190682 A JP57190682 A JP 57190682A JP 19068282 A JP19068282 A JP 19068282A JP S5887731 A JPS5887731 A JP S5887731A
Authority
JP
Japan
Prior art keywords
semiconductor
insulating layer
junction
semiconductor body
main surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57190682A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0326493B2 (OSRAM
Inventor
ア−サ−・マリ−・ユ−ジ−ン・フ−ベルシユツ
ゲラルダス・ゲゴリウス・ペトラス・フアン・ゴルコム
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of JPS5887731A publication Critical patent/JPS5887731A/ja
Publication of JPH0326493B2 publication Critical patent/JPH0326493B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J23/00—Details of transit-time tubes of the types covered by group H01J25/00
    • H01J23/02—Electrodes; Magnetic control means; Screens
    • H01J23/06—Electron or ion guns
    • H01J23/065—Electron or ion guns producing a solid cylindrical beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/84—Traps for removing or diverting unwanted particles, e.g. negative ions, fringing electrons; Arrangements for velocity or mass selection

Landscapes

  • Cold Cathode And The Manufacture (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
JP57190682A 1981-10-29 1982-10-29 画像記録または表示用陰極線管を具える装置 Granted JPS5887731A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8104893A NL8104893A (nl) 1981-10-29 1981-10-29 Kathodestraalbuis en halfgeleiderinrichting voor toepassing in een dergelijke kathodestraalbuis.
NL8104893 1981-10-29

Publications (2)

Publication Number Publication Date
JPS5887731A true JPS5887731A (ja) 1983-05-25
JPH0326493B2 JPH0326493B2 (OSRAM) 1991-04-11

Family

ID=19838284

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57190682A Granted JPS5887731A (ja) 1981-10-29 1982-10-29 画像記録または表示用陰極線管を具える装置

Country Status (11)

Country Link
US (1) US4574216A (OSRAM)
JP (1) JPS5887731A (OSRAM)
CA (1) CA1194082A (OSRAM)
DE (1) DE3237891A1 (OSRAM)
ES (1) ES8401676A1 (OSRAM)
FR (1) FR2515872B1 (OSRAM)
GB (1) GB2109156B (OSRAM)
HK (1) HK2886A (OSRAM)
IT (1) IT1155405B (OSRAM)
NL (1) NL8104893A (OSRAM)
SG (1) SG74585G (OSRAM)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61131331A (ja) * 1984-11-28 1986-06-19 フィリップス　エレクトロニクス　ネムローゼ　フェンノートシャップ 電子ビーム装置
JPS636718A (ja) * 1986-06-26 1988-01-12 Canon Inc 電子放出装置
JPS6313247A (ja) * 1986-07-04 1988-01-20 Canon Inc 電子放出装置およびその製造方法
JPS63226863A (ja) * 1987-02-27 1988-09-21 フィリップス　エレクトロニクス　ネムローゼ　フェンノートシャップ 画像表示装置
JPS63237340A (ja) * 1987-03-26 1988-10-03 Canon Inc 表示装置
JPH01100843A (ja) * 1987-10-13 1989-04-19 Canon Inc 電子線発生装置

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4521900A (en) * 1982-10-14 1985-06-04 Imatron Associates Electron beam control assembly and method for a scanning electron beam computed tomography scanner
US4523316A (en) * 1982-10-29 1985-06-11 Rca Corporation Semiconductor laser with non-absorbing mirror facet
NL8304444A (nl) * 1983-12-27 1985-07-16 Philips Nv Beeldbuis.
NL8400297A (nl) * 1984-02-01 1985-09-02 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenbundel.
DE3538175C2 (de) * 1984-11-21 1996-06-05 Philips Electronics Nv Halbleiteranordnung zum Erzeugen eines Elektronenstromes und ihre Verwendung
NL8500596A (nl) * 1985-03-04 1986-10-01 Philips Nv Inrichting voorzien van een halfgeleiderkathode.
US4763043A (en) * 1985-12-23 1988-08-09 Raytheon Company P-N junction semiconductor secondary emission cathode and tube
EP0257460B1 (en) * 1986-08-12 1996-04-24 Canon Kabushiki Kaisha Solid-state electron beam generator
GB8621600D0 (en) * 1986-09-08 1987-03-18 Gen Electric Co Plc Vacuum devices
NL8901075A (nl) * 1989-04-28 1990-11-16 Philips Nv Inrichting ten behoeve van elektronengeneratie en weergeefinrichting.
US5142193A (en) * 1989-06-06 1992-08-25 Kaman Sciences Corporation Photonic cathode ray tube
US5359257A (en) * 1990-12-03 1994-10-25 Bunch Kyle J Ballistic electron, solid state cathode
US5144191A (en) * 1991-06-12 1992-09-01 Mcnc Horizontal microelectronic field emission devices
DE69316960T2 (de) * 1992-11-12 1998-07-30 Koninkl Philips Electronics Nv Elektronenröhre mit Halbleiterkathode
EP0601637B1 (en) * 1992-12-08 1999-10-27 Koninklijke Philips Electronics N.V. Cathode ray tube comprising a semiconductor cathode
DE69329253T2 (de) * 1992-12-08 2000-12-14 Koninklijke Philips Electronics N.V., Eindhoven Kathodenstrahlröhre mit Halbleiterkathode.
JPH07254354A (ja) * 1994-01-28 1995-10-03 Toshiba Corp 電界電子放出素子、電界電子放出素子の製造方法およびこの電界電子放出素子を用いた平面ディスプレイ装置
US5686789A (en) * 1995-03-14 1997-11-11 Osram Sylvania Inc. Discharge device having cathode with micro hollow array
JPH10508982A (ja) * 1995-09-04 1998-09-02 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ 入射粒子からエミッタを保護する手段を有する光電装置
US5825123A (en) * 1996-03-28 1998-10-20 Retsky; Michael W. Method and apparatus for deflecting a charged particle stream
JPH1012127A (ja) * 1996-06-24 1998-01-16 Nec Corp 電界電子放出装置
JP2001189121A (ja) * 2000-01-06 2001-07-10 Sony Corp 電子放出装置およびその製造方法
US7135821B2 (en) * 2003-10-01 2006-11-14 Altera Corporation High-definition cathode ray tube and electron gun
EP2052402A2 (en) * 2006-08-10 2009-04-29 Philips Intellectual Property & Standards GmbH X-ray tube and method of voltage supplying of an ion deflecting and collecting setup of an x-ray tube
FR2999796B1 (fr) * 2012-12-19 2015-01-30 Thales Sa Dispositif d'optique electronique

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54111272A (en) * 1978-01-27 1979-08-31 Philips Nv Electron current generating semiconductor* method of fabricating same and device for applying same
JPS5615529A (en) * 1979-07-13 1981-02-14 Philips Nv Semiconductor device and method of fabricating same

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2164555A (en) * 1937-06-19 1939-07-04 Rca Corp Cathode ray tube
NL87923C (OSRAM) * 1953-02-13
BE549199A (OSRAM) * 1955-09-01
NL150609B (nl) * 1965-04-22 1976-08-16 Philips Nv Inrichting voor het opwekken van een elektronenstroom.
CA927468A (en) * 1968-08-12 1973-05-29 E. Simon Ralph Negative effective electron affinity emitters with drift fields using deep acceptor doping
BE794167A (fr) * 1972-01-19 1973-07-17 Philips Nv Tube cathodique
US3909119A (en) * 1974-02-06 1975-09-30 Westinghouse Electric Corp Guarded planar PN junction semiconductor device
US4160188A (en) * 1976-04-23 1979-07-03 The United States Of America As Represented By The Secretary Of The Navy Electron beam tube
JPS53121454A (en) * 1977-03-31 1978-10-23 Toshiba Corp Electron source of thin film electric field emission type and its manufacture

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54111272A (en) * 1978-01-27 1979-08-31 Philips Nv Electron current generating semiconductor* method of fabricating same and device for applying same
JPS5615529A (en) * 1979-07-13 1981-02-14 Philips Nv Semiconductor device and method of fabricating same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61131331A (ja) * 1984-11-28 1986-06-19 フィリップス　エレクトロニクス　ネムローゼ　フェンノートシャップ 電子ビーム装置
JPS636718A (ja) * 1986-06-26 1988-01-12 Canon Inc 電子放出装置
JPS6313247A (ja) * 1986-07-04 1988-01-20 Canon Inc 電子放出装置およびその製造方法
JPS63226863A (ja) * 1987-02-27 1988-09-21 フィリップス　エレクトロニクス　ネムローゼ　フェンノートシャップ 画像表示装置
JPS63237340A (ja) * 1987-03-26 1988-10-03 Canon Inc 表示装置
JPH01100843A (ja) * 1987-10-13 1989-04-19 Canon Inc 電子線発生装置

Also Published As

Publication number Publication date
US4574216A (en) 1986-03-04
FR2515872B1 (fr) 1985-07-19
NL8104893A (nl) 1983-05-16
IT1155405B (it) 1987-01-28
ES516862A0 (es) 1983-12-01
IT8223934A1 (it) 1984-04-26
FR2515872A1 (fr) 1983-05-06
GB2109156B (en) 1985-06-19
SG74585G (en) 1986-11-21
HK2886A (en) 1986-01-24
IT8223934A0 (it) 1982-10-26
CA1194082A (en) 1985-09-24
JPH0326493B2 (OSRAM) 1991-04-11
DE3237891A1 (de) 1983-05-11
ES8401676A1 (es) 1983-12-01
GB2109156A (en) 1983-05-25

Similar Documents

Publication Publication Date Title
JPS5887731A (ja) 画像記録または表示用陰極線管を具える装置
EP0184868B1 (en) Electron-beam device and semiconducteur device for use in such an electron-beam device
US4303930A (en) Semiconductor device for generating an electron beam and method of manufacturing same
JP2964155B2 (ja) 電子ビーム発生装置並びにこれを用いた陰極線管及び表示装置
JPS6146931B2 (OSRAM)
US4801994A (en) Semiconductor electron-current generating device having improved cathode efficiency
JPS60180040A (ja) 電子ビーム発生用半導体装置
US4506284A (en) Electron sources and equipment having electron sources
JPS61203547A (ja) 半導体本体を具える装置及び半導体装置
US4743794A (en) Cathode-ray tube having an ion trap
EP0234606B1 (en) Cathode ray tube with ion trap
US4853754A (en) Semiconductor device having cold cathode
JPS61131330A (ja) 半導体装置
EP0038865A1 (en) Electron beam storage apparatus
JPH06243777A (ja) 冷陰極
JP2003031146A (ja) 受像管装置