JPS5880889A - 半導体レーザの製造方法 - Google Patents

半導体レーザの製造方法

Info

Publication number
JPS5880889A
JPS5880889A JP56179305A JP17930581A JPS5880889A JP S5880889 A JPS5880889 A JP S5880889A JP 56179305 A JP56179305 A JP 56179305A JP 17930581 A JP17930581 A JP 17930581A JP S5880889 A JPS5880889 A JP S5880889A
Authority
JP
Japan
Prior art keywords
layer
type
conductivity type
mesa
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56179305A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6358390B2 (enExample
Inventor
Ikuo Mito
郁夫 水戸
Mitsuhiro Kitamura
北村　光弘
Kenichi Kobayashi
健一 小林
Isao Kobayashi
功郎 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56179305A priority Critical patent/JPS5880889A/ja
Publication of JPS5880889A publication Critical patent/JPS5880889A/ja
Publication of JPS6358390B2 publication Critical patent/JPS6358390B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer

Landscapes

  • Semiconductor Lasers (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP56179305A 1981-11-09 1981-11-09 半導体レーザの製造方法 Granted JPS5880889A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56179305A JPS5880889A (ja) 1981-11-09 1981-11-09 半導体レーザの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56179305A JPS5880889A (ja) 1981-11-09 1981-11-09 半導体レーザの製造方法

Publications (2)

Publication Number Publication Date
JPS5880889A true JPS5880889A (ja) 1983-05-16
JPS6358390B2 JPS6358390B2 (enExample) 1988-11-15

Family

ID=16063499

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56179305A Granted JPS5880889A (ja) 1981-11-09 1981-11-09 半導体レーザの製造方法

Country Status (1)

Country Link
JP (1) JPS5880889A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58121693A (ja) * 1982-01-12 1983-07-20 Sanyo Electric Co Ltd 半導体レ−ザ
JPS6184087A (ja) * 1984-10-02 1986-04-28 Agency Of Ind Science & Technol 多重量子井戸半導体レ−ザ及びその製造方法
US4937836A (en) * 1983-11-30 1990-06-26 Sharp Kabushiki Kaisha Semiconductor laser device and production method therefor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52100885A (en) * 1976-02-19 1977-08-24 Sony Corp Production of semiconductor device by liquid epitaxial growth
JPS5521199A (en) * 1978-07-31 1980-02-15 Rca Corp Semiconductor laser

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52100885A (en) * 1976-02-19 1977-08-24 Sony Corp Production of semiconductor device by liquid epitaxial growth
JPS5521199A (en) * 1978-07-31 1980-02-15 Rca Corp Semiconductor laser

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58121693A (ja) * 1982-01-12 1983-07-20 Sanyo Electric Co Ltd 半導体レ−ザ
US4937836A (en) * 1983-11-30 1990-06-26 Sharp Kabushiki Kaisha Semiconductor laser device and production method therefor
JPS6184087A (ja) * 1984-10-02 1986-04-28 Agency Of Ind Science & Technol 多重量子井戸半導体レ−ザ及びその製造方法

Also Published As

Publication number Publication date
JPS6358390B2 (enExample) 1988-11-15

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