JPS587829A - ドライエツチング方法 - Google Patents

ドライエツチング方法

Info

Publication number
JPS587829A
JPS587829A JP56105468A JP10546881A JPS587829A JP S587829 A JPS587829 A JP S587829A JP 56105468 A JP56105468 A JP 56105468A JP 10546881 A JP10546881 A JP 10546881A JP S587829 A JPS587829 A JP S587829A
Authority
JP
Japan
Prior art keywords
etching
etched
polycrystalline
dry etching
etching method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56105468A
Other languages
English (en)
Japanese (ja)
Other versions
JPH031825B2 (Direct
Inventor
Haruo Okano
晴雄 岡野
Yasuhiro Horiike
靖浩 堀池
Takashi Yamazaki
隆 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56105468A priority Critical patent/JPS587829A/ja
Publication of JPS587829A publication Critical patent/JPS587829A/ja
Publication of JPH031825B2 publication Critical patent/JPH031825B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P50/268—
    • H10P50/267—

Landscapes

  • Drying Of Semiconductors (AREA)
JP56105468A 1981-07-08 1981-07-08 ドライエツチング方法 Granted JPS587829A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56105468A JPS587829A (ja) 1981-07-08 1981-07-08 ドライエツチング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56105468A JPS587829A (ja) 1981-07-08 1981-07-08 ドライエツチング方法

Publications (2)

Publication Number Publication Date
JPS587829A true JPS587829A (ja) 1983-01-17
JPH031825B2 JPH031825B2 (Direct) 1991-01-11

Family

ID=14408408

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56105468A Granted JPS587829A (ja) 1981-07-08 1981-07-08 ドライエツチング方法

Country Status (1)

Country Link
JP (1) JPS587829A (Direct)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6415953A (en) * 1987-07-10 1989-01-19 Hitachi Ltd Dry etching method
US4981816A (en) * 1988-10-27 1991-01-01 General Electric Company MO/TI Contact to silicon
US5180466A (en) * 1984-12-29 1993-01-19 Fujitsu Limited Process for dry etching a silicon nitride layer
WO2004030068A1 (de) * 2002-09-23 2004-04-08 Ihp Gmbh - Innovations For High Performance Microelectronics / Institut Für Innovative Mikroelektronik Verfahren zur herstellung eines elektronischen bauelements mit einer praseodymoxid-schicht
JP4865915B1 (ja) * 2010-10-22 2012-02-01 泉 菅谷 糸通し機能付き携帯可能な拡大レンズ
US9130444B2 (en) 2007-01-18 2015-09-08 Siemens Aktiengesellschaft Rotary drive with straight primary part segments

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5437580A (en) * 1977-08-30 1979-03-20 Nec Corp Dry etching method and target film used for it
JPS55119177A (en) * 1979-02-21 1980-09-12 Ibm Silicon etching method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5437580A (en) * 1977-08-30 1979-03-20 Nec Corp Dry etching method and target film used for it
JPS55119177A (en) * 1979-02-21 1980-09-12 Ibm Silicon etching method

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5180466A (en) * 1984-12-29 1993-01-19 Fujitsu Limited Process for dry etching a silicon nitride layer
JPS6415953A (en) * 1987-07-10 1989-01-19 Hitachi Ltd Dry etching method
US4981816A (en) * 1988-10-27 1991-01-01 General Electric Company MO/TI Contact to silicon
WO2004030068A1 (de) * 2002-09-23 2004-04-08 Ihp Gmbh - Innovations For High Performance Microelectronics / Institut Für Innovative Mikroelektronik Verfahren zur herstellung eines elektronischen bauelements mit einer praseodymoxid-schicht
DE10244862B4 (de) * 2002-09-23 2006-09-14 IHP GmbH - Innovations for High Performance Microelectronics/Institut für innovative Mikroelektronik Verfahren zur Herstellung eines elektronischen Bauelements mit einer Praseodymoxid-Schicht
US9130444B2 (en) 2007-01-18 2015-09-08 Siemens Aktiengesellschaft Rotary drive with straight primary part segments
JP4865915B1 (ja) * 2010-10-22 2012-02-01 泉 菅谷 糸通し機能付き携帯可能な拡大レンズ

Also Published As

Publication number Publication date
JPH031825B2 (Direct) 1991-01-11

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