JPS5867075A - 複合半導体装置 - Google Patents

複合半導体装置

Info

Publication number
JPS5867075A
JPS5867075A JP56166564A JP16656481A JPS5867075A JP S5867075 A JPS5867075 A JP S5867075A JP 56166564 A JP56166564 A JP 56166564A JP 16656481 A JP16656481 A JP 16656481A JP S5867075 A JPS5867075 A JP S5867075A
Authority
JP
Japan
Prior art keywords
layer
light receiving
receiving element
semiconductor device
composite semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56166564A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6262477B2 (enrdf_load_stackoverflow
Inventor
Masanori Ito
正規 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56166564A priority Critical patent/JPS5867075A/ja
Publication of JPS5867075A publication Critical patent/JPS5867075A/ja
Publication of JPS6262477B2 publication Critical patent/JPS6262477B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
JP56166564A 1981-10-19 1981-10-19 複合半導体装置 Granted JPS5867075A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56166564A JPS5867075A (ja) 1981-10-19 1981-10-19 複合半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56166564A JPS5867075A (ja) 1981-10-19 1981-10-19 複合半導体装置

Publications (2)

Publication Number Publication Date
JPS5867075A true JPS5867075A (ja) 1983-04-21
JPS6262477B2 JPS6262477B2 (enrdf_load_stackoverflow) 1987-12-26

Family

ID=15833596

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56166564A Granted JPS5867075A (ja) 1981-10-19 1981-10-19 複合半導体装置

Country Status (1)

Country Link
JP (1) JPS5867075A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62193276A (ja) * 1986-02-20 1987-08-25 Canon Inc 光電変換装置
JPS6346765A (ja) * 1986-08-15 1988-02-27 Nec Corp 配列型赤外線検知器

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0350372U (enrdf_load_stackoverflow) * 1989-09-21 1991-05-16

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56104155U (enrdf_load_stackoverflow) * 1980-01-11 1981-08-14

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56104155U (enrdf_load_stackoverflow) * 1980-01-11 1981-08-14

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62193276A (ja) * 1986-02-20 1987-08-25 Canon Inc 光電変換装置
JPS6346765A (ja) * 1986-08-15 1988-02-27 Nec Corp 配列型赤外線検知器

Also Published As

Publication number Publication date
JPS6262477B2 (enrdf_load_stackoverflow) 1987-12-26

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