JPS5864032A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5864032A
JPS5864032A JP16301481A JP16301481A JPS5864032A JP S5864032 A JPS5864032 A JP S5864032A JP 16301481 A JP16301481 A JP 16301481A JP 16301481 A JP16301481 A JP 16301481A JP S5864032 A JPS5864032 A JP S5864032A
Authority
JP
Japan
Prior art keywords
etching
photoresist
etched
makes progress
silicon oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16301481A
Other languages
English (en)
Japanese (ja)
Other versions
JPH047095B2 (enrdf_load_stackoverflow
Inventor
Masato Tanaka
正人 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP16301481A priority Critical patent/JPS5864032A/ja
Publication of JPS5864032A publication Critical patent/JPS5864032A/ja
Publication of JPH047095B2 publication Critical patent/JPH047095B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
JP16301481A 1981-10-13 1981-10-13 半導体装置の製造方法 Granted JPS5864032A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16301481A JPS5864032A (ja) 1981-10-13 1981-10-13 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16301481A JPS5864032A (ja) 1981-10-13 1981-10-13 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5864032A true JPS5864032A (ja) 1983-04-16
JPH047095B2 JPH047095B2 (enrdf_load_stackoverflow) 1992-02-07

Family

ID=15765550

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16301481A Granted JPS5864032A (ja) 1981-10-13 1981-10-13 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5864032A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4908333A (en) * 1987-03-24 1990-03-13 Oki Electric Industry Co., Ltd. Process for manufacturing a semiconductor device having a contact window defined by an inclined surface of a composite film
JPH0655364U (ja) * 1993-01-08 1994-08-02 第一精工株式会社 釣り用パイプ天秤

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4908333A (en) * 1987-03-24 1990-03-13 Oki Electric Industry Co., Ltd. Process for manufacturing a semiconductor device having a contact window defined by an inclined surface of a composite film
JPH0655364U (ja) * 1993-01-08 1994-08-02 第一精工株式会社 釣り用パイプ天秤

Also Published As

Publication number Publication date
JPH047095B2 (enrdf_load_stackoverflow) 1992-02-07

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