JPS586188A - ジヨセフソン接合素子 - Google Patents
ジヨセフソン接合素子Info
- Publication number
- JPS586188A JPS586188A JP56103549A JP10354981A JPS586188A JP S586188 A JPS586188 A JP S586188A JP 56103549 A JP56103549 A JP 56103549A JP 10354981 A JP10354981 A JP 10354981A JP S586188 A JPS586188 A JP S586188A
- Authority
- JP
- Japan
- Prior art keywords
- superconductor
- layer
- niobium
- electrode body
- superconductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000000694 effects Effects 0.000 claims abstract description 11
- 150000003682 vanadium compounds Chemical class 0.000 claims abstract description 5
- 239000002887 superconductor Substances 0.000 claims description 40
- 229910052758 niobium Inorganic materials 0.000 claims description 23
- 239000010955 niobium Substances 0.000 claims description 23
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 23
- 150000002822 niobium compounds Chemical class 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 230000035515 penetration Effects 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 22
- 239000000463 material Substances 0.000 abstract description 13
- 230000006866 deterioration Effects 0.000 abstract description 8
- 150000001875 compounds Chemical class 0.000 abstract description 6
- 239000007772 electrode material Substances 0.000 abstract 5
- 230000008595 infiltration Effects 0.000 abstract 1
- 238000001764 infiltration Methods 0.000 abstract 1
- 229910000978 Pb alloy Inorganic materials 0.000 description 9
- 230000035945 sensitivity Effects 0.000 description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 238000003466 welding Methods 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 241000345998 Calamus manan Species 0.000 description 1
- 229910001257 Nb alloy Inorganic materials 0.000 description 1
- 241000219289 Silene Species 0.000 description 1
- 241001077957 Spilanthes urens Species 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 210000003323 beak Anatomy 0.000 description 1
- 229910052918 calcium silicate Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 235000012950 rattan cane Nutrition 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/10—Junction-based devices
- H10N60/12—Josephson-effect devices
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56103549A JPS586188A (ja) | 1981-07-02 | 1981-07-02 | ジヨセフソン接合素子 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56103549A JPS586188A (ja) | 1981-07-02 | 1981-07-02 | ジヨセフソン接合素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS586188A true JPS586188A (ja) | 1983-01-13 |
JPH0322068B2 JPH0322068B2 (enrdf_load_stackoverflow) | 1991-03-26 |
Family
ID=14356899
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56103549A Granted JPS586188A (ja) | 1981-07-02 | 1981-07-02 | ジヨセフソン接合素子 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS586188A (enrdf_load_stackoverflow) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60149180A (ja) * | 1984-01-17 | 1985-08-06 | Agency Of Ind Science & Technol | ジヨセフソン素子 |
JPS63169083A (ja) * | 1987-01-05 | 1988-07-13 | Agency Of Ind Science & Technol | トンネル型ジヨセフソン接合 |
US5104848A (en) * | 1988-04-21 | 1992-04-14 | U.S. Philips Corporation | Device and method of manufacturing a device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5282090A (en) * | 1975-12-27 | 1977-07-08 | Fujitsu Ltd | Apparatus and manufacture for superconductor |
-
1981
- 1981-07-02 JP JP56103549A patent/JPS586188A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5282090A (en) * | 1975-12-27 | 1977-07-08 | Fujitsu Ltd | Apparatus and manufacture for superconductor |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60149180A (ja) * | 1984-01-17 | 1985-08-06 | Agency Of Ind Science & Technol | ジヨセフソン素子 |
JPS63169083A (ja) * | 1987-01-05 | 1988-07-13 | Agency Of Ind Science & Technol | トンネル型ジヨセフソン接合 |
US5104848A (en) * | 1988-04-21 | 1992-04-14 | U.S. Philips Corporation | Device and method of manufacturing a device |
Also Published As
Publication number | Publication date |
---|---|
JPH0322068B2 (enrdf_load_stackoverflow) | 1991-03-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS586188A (ja) | ジヨセフソン接合素子 | |
JPH0322711B2 (enrdf_load_stackoverflow) | ||
JPS637675A (ja) | 超伝導装置の製造方法 | |
JP3690823B2 (ja) | 超伝導接合体 | |
JPS616882A (ja) | 超電導集積回路の端子電極とその製造方法 | |
JPS58164279A (ja) | ジヨセフソン接合の形成方法 | |
JPH045873A (ja) | 超伝導コンタクト作製方法及び超伝導回路 | |
JPS5853874A (ja) | ジヨセフソン集積回路 | |
JPS62136018A (ja) | 半導体装置の製造方法 | |
JPS58157181A (ja) | 超電導回路用コンタクト | |
JPS602794B2 (ja) | ジヨゼフソン接合素子 | |
JP2698364B2 (ja) | 超伝導コンタクトおよびその製造方法 | |
JP2623610B2 (ja) | ジョセフソン接合素子 | |
JPS58108739A (ja) | ジヨセフソン接合装置 | |
JPS63262808A (ja) | 超電導体の接合構造 | |
JPS6358978A (ja) | 超伝導トンネル接台素子 | |
JPS6164178A (ja) | 超伝導回路の製法 | |
JPS61144892A (ja) | シヨセフソン集積回路の製造方法 | |
JP2966378B2 (ja) | Ba−K−Bi−O系超電導薄膜の製造方法 | |
JPS6360555B2 (enrdf_load_stackoverflow) | ||
JPH0114715B2 (enrdf_load_stackoverflow) | ||
JPS59194482A (ja) | トンネル接合型ジヨセフソン素子 | |
JPH03173185A (ja) | 超電導素子およびその製造方法 | |
JPH02308578A (ja) | 超電導体装置の製造方法 | |
JPS6329437B2 (enrdf_load_stackoverflow) |