JPS586149A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS586149A JPS586149A JP10352981A JP10352981A JPS586149A JP S586149 A JPS586149 A JP S586149A JP 10352981 A JP10352981 A JP 10352981A JP 10352981 A JP10352981 A JP 10352981A JP S586149 A JPS586149 A JP S586149A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- film
- conductive film
- semiconductor device
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 42
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000000758 substrate Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 12
- 238000010884 ion-beam technique Methods 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 3
- 239000011521 glass Substances 0.000 abstract description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 6
- 239000011574 phosphorus Substances 0.000 abstract description 3
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 120
- 229910052751 metal Inorganic materials 0.000 description 27
- 239000002184 metal Substances 0.000 description 27
- 239000010410 layer Substances 0.000 description 17
- 150000004767 nitrides Chemical class 0.000 description 16
- 239000011229 interlayer Substances 0.000 description 14
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10352981A JPS586149A (ja) | 1981-07-02 | 1981-07-02 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10352981A JPS586149A (ja) | 1981-07-02 | 1981-07-02 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS586149A true JPS586149A (ja) | 1983-01-13 |
| JPS637463B2 JPS637463B2 (en, 2012) | 1988-02-17 |
Family
ID=14356416
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10352981A Granted JPS586149A (ja) | 1981-07-02 | 1981-07-02 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS586149A (en, 2012) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01125882A (ja) * | 1987-08-21 | 1989-05-18 | Nippon Denso Co Ltd | 磁気検出装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52156375A (en) * | 1976-06-22 | 1977-12-26 | Nippon Electric Co | Method of producing multilayer circuit substrate |
-
1981
- 1981-07-02 JP JP10352981A patent/JPS586149A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52156375A (en) * | 1976-06-22 | 1977-12-26 | Nippon Electric Co | Method of producing multilayer circuit substrate |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01125882A (ja) * | 1987-08-21 | 1989-05-18 | Nippon Denso Co Ltd | 磁気検出装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS637463B2 (en, 2012) | 1988-02-17 |
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