JPS586126A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS586126A
JPS586126A JP56104007A JP10400781A JPS586126A JP S586126 A JPS586126 A JP S586126A JP 56104007 A JP56104007 A JP 56104007A JP 10400781 A JP10400781 A JP 10400781A JP S586126 A JPS586126 A JP S586126A
Authority
JP
Japan
Prior art keywords
base
semiconductor device
silicon
direct
silicon nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56104007A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0330293B2 (member.php
Inventor
Osamu Hataishi
畑石　治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56104007A priority Critical patent/JPS586126A/ja
Publication of JPS586126A publication Critical patent/JPS586126A/ja
Publication of JPH0330293B2 publication Critical patent/JPH0330293B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10D64/011—

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Weting (AREA)
JP56104007A 1981-07-03 1981-07-03 半導体装置の製造方法 Granted JPS586126A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56104007A JPS586126A (ja) 1981-07-03 1981-07-03 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56104007A JPS586126A (ja) 1981-07-03 1981-07-03 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS586126A true JPS586126A (ja) 1983-01-13
JPH0330293B2 JPH0330293B2 (member.php) 1991-04-26

Family

ID=14369202

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56104007A Granted JPS586126A (ja) 1981-07-03 1981-07-03 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS586126A (member.php)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58180409U (ja) * 1982-05-28 1983-12-02 ソニ−マグネスケ−ル株式会社 測尺装置
JPS6127648U (ja) * 1984-07-24 1986-02-19 株式会社 大隈鐵工所 伸縮形計測装置
JPH01148257U (member.php) * 1988-03-28 1989-10-13

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5219968A (en) * 1975-08-06 1977-02-15 Nec Corp Semiconductor ic manufacturig process
JPS5621320A (en) * 1979-07-28 1981-02-27 Fujitsu Ltd Manufacture of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5219968A (en) * 1975-08-06 1977-02-15 Nec Corp Semiconductor ic manufacturig process
JPS5621320A (en) * 1979-07-28 1981-02-27 Fujitsu Ltd Manufacture of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58180409U (ja) * 1982-05-28 1983-12-02 ソニ−マグネスケ−ル株式会社 測尺装置
JPS6127648U (ja) * 1984-07-24 1986-02-19 株式会社 大隈鐵工所 伸縮形計測装置
JPH01148257U (member.php) * 1988-03-28 1989-10-13

Also Published As

Publication number Publication date
JPH0330293B2 (member.php) 1991-04-26

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