JPH0330293B2 - - Google Patents
Info
- Publication number
- JPH0330293B2 JPH0330293B2 JP56104007A JP10400781A JPH0330293B2 JP H0330293 B2 JPH0330293 B2 JP H0330293B2 JP 56104007 A JP56104007 A JP 56104007A JP 10400781 A JP10400781 A JP 10400781A JP H0330293 B2 JPH0330293 B2 JP H0330293B2
- Authority
- JP
- Japan
- Prior art keywords
- base
- nitride film
- window
- film
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H10D64/011—
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Weting (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56104007A JPS586126A (ja) | 1981-07-03 | 1981-07-03 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56104007A JPS586126A (ja) | 1981-07-03 | 1981-07-03 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS586126A JPS586126A (ja) | 1983-01-13 |
| JPH0330293B2 true JPH0330293B2 (member.php) | 1991-04-26 |
Family
ID=14369202
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56104007A Granted JPS586126A (ja) | 1981-07-03 | 1981-07-03 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS586126A (member.php) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58180409U (ja) * | 1982-05-28 | 1983-12-02 | ソニ−マグネスケ−ル株式会社 | 測尺装置 |
| JPS6127648U (ja) * | 1984-07-24 | 1986-02-19 | 株式会社 大隈鐵工所 | 伸縮形計測装置 |
| JPH01148257U (member.php) * | 1988-03-28 | 1989-10-13 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5219968A (en) * | 1975-08-06 | 1977-02-15 | Nec Corp | Semiconductor ic manufacturig process |
| JPS5621320A (en) * | 1979-07-28 | 1981-02-27 | Fujitsu Ltd | Manufacture of semiconductor device |
-
1981
- 1981-07-03 JP JP56104007A patent/JPS586126A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS586126A (ja) | 1983-01-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0076106B1 (en) | Method for producing a bipolar transistor | |
| JPH08139278A (ja) | 半導体装置の製造方法 | |
| JPS62194673A (ja) | 半導体装置の製造方法 | |
| JPS59217364A (ja) | 半導体装置の製法 | |
| JPH0330293B2 (member.php) | ||
| JP2910422B2 (ja) | 半導体装置の製造方法 | |
| JP2940492B2 (ja) | 半導体装置およびその製造方法 | |
| JPH021934A (ja) | バイポーラ半導体装置の製造方法 | |
| US5496742A (en) | Method for manufacturing semiconductor device enabling gettering effect | |
| JPS5933271B2 (ja) | 半導体装置の製造方法 | |
| JPS6022506B2 (ja) | 半導体装置の製法 | |
| JPH0370126A (ja) | 多結晶シリコン電極およびその製造方法 | |
| JPH10303418A (ja) | 半導体装置の製造方法 | |
| JP4213298B2 (ja) | 半導体装置の製造方法 | |
| JPS58110076A (ja) | 半導体装置の製造方法 | |
| JPS6188543A (ja) | 半導体装置の製造方法 | |
| JPH0831468B2 (ja) | 半導体装置の製造方法 | |
| JPH0494567A (ja) | 半導体装置の製造方法 | |
| JPH025411A (ja) | 半導体装置の製造方法 | |
| JPH0750274A (ja) | 選択タングステン成長によるパターンの形成方法 | |
| JPH01282867A (ja) | バイポーラトランジスタの製造方法 | |
| JPS6254453A (ja) | 半導体装置の製造方法 | |
| EP0383712A2 (en) | Method for fabricating high performance transistors with polycrystalline silicon contacts | |
| JPS62211949A (ja) | 半導体装置の製造法 | |
| JPH02268440A (ja) | 半導体装置の製造方法 |