JPS5856365A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5856365A
JPS5856365A JP56154613A JP15461381A JPS5856365A JP S5856365 A JPS5856365 A JP S5856365A JP 56154613 A JP56154613 A JP 56154613A JP 15461381 A JP15461381 A JP 15461381A JP S5856365 A JPS5856365 A JP S5856365A
Authority
JP
Japan
Prior art keywords
oxide film
film
gate oxide
ions
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56154613A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0336312B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Junji Sakurai
桜井　潤治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56154613A priority Critical patent/JPS5856365A/ja
Priority to US06/425,644 priority patent/US4489478A/en
Priority to DE8282305160T priority patent/DE3278549D1/de
Priority to EP82305160A priority patent/EP0076161B1/en
Publication of JPS5856365A publication Critical patent/JPS5856365A/ja
Publication of JPH0336312B2 publication Critical patent/JPH0336312B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Formation Of Insulating Films (AREA)
JP56154613A 1981-09-29 1981-09-29 半導体装置の製造方法 Granted JPS5856365A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP56154613A JPS5856365A (ja) 1981-09-29 1981-09-29 半導体装置の製造方法
US06/425,644 US4489478A (en) 1981-09-29 1982-09-28 Process for producing a three-dimensional semiconductor device
DE8282305160T DE3278549D1 (en) 1981-09-29 1982-09-29 Process for manufacturing a multi-layer semiconductor device
EP82305160A EP0076161B1 (en) 1981-09-29 1982-09-29 Process for manufacturing a multi-layer semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56154613A JPS5856365A (ja) 1981-09-29 1981-09-29 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5856365A true JPS5856365A (ja) 1983-04-04
JPH0336312B2 JPH0336312B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-05-31

Family

ID=15588008

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56154613A Granted JPS5856365A (ja) 1981-09-29 1981-09-29 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5856365A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02151072A (ja) * 1988-12-02 1990-06-11 Ricoh Co Ltd 薄膜トランジスタ
JPH05152569A (ja) * 1991-11-25 1993-06-18 Casio Comput Co Ltd 電界効果型薄膜トランジスタおよびその製造方法
JP2006196926A (ja) * 1994-09-14 2006-07-27 Toshiba Corp 半導体装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02151072A (ja) * 1988-12-02 1990-06-11 Ricoh Co Ltd 薄膜トランジスタ
JPH05152569A (ja) * 1991-11-25 1993-06-18 Casio Comput Co Ltd 電界効果型薄膜トランジスタおよびその製造方法
JP2006196926A (ja) * 1994-09-14 2006-07-27 Toshiba Corp 半導体装置

Also Published As

Publication number Publication date
JPH0336312B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-05-31

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