JPS5853867A - 半導体受光素子 - Google Patents
半導体受光素子Info
- Publication number
- JPS5853867A JPS5853867A JP56152610A JP15261081A JPS5853867A JP S5853867 A JPS5853867 A JP S5853867A JP 56152610 A JP56152610 A JP 56152610A JP 15261081 A JP15261081 A JP 15261081A JP S5853867 A JPS5853867 A JP S5853867A
- Authority
- JP
- Japan
- Prior art keywords
- type
- layer
- light sensitive
- junction
- inp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
Landscapes
- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56152610A JPS5853867A (ja) | 1981-09-26 | 1981-09-26 | 半導体受光素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56152610A JPS5853867A (ja) | 1981-09-26 | 1981-09-26 | 半導体受光素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5853867A true JPS5853867A (ja) | 1983-03-30 |
| JPS6244869B2 JPS6244869B2 (cs) | 1987-09-22 |
Family
ID=15544156
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56152610A Granted JPS5853867A (ja) | 1981-09-26 | 1981-09-26 | 半導体受光素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5853867A (cs) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4949144A (en) * | 1985-09-24 | 1990-08-14 | Kabushiki Kaisha Toshiba | Semiconductor photo-detector having a two-stepped impurity profile |
-
1981
- 1981-09-26 JP JP56152610A patent/JPS5853867A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4949144A (en) * | 1985-09-24 | 1990-08-14 | Kabushiki Kaisha Toshiba | Semiconductor photo-detector having a two-stepped impurity profile |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6244869B2 (cs) | 1987-09-22 |
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