JPS5852876A - 砒化ガリウム半導体装置 - Google Patents

砒化ガリウム半導体装置

Info

Publication number
JPS5852876A
JPS5852876A JP56149520A JP14952081A JPS5852876A JP S5852876 A JPS5852876 A JP S5852876A JP 56149520 A JP56149520 A JP 56149520A JP 14952081 A JP14952081 A JP 14952081A JP S5852876 A JPS5852876 A JP S5852876A
Authority
JP
Japan
Prior art keywords
gold
silver
melting point
aluminum
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56149520A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0212017B2 (cs
Inventor
Kiyoo Kamei
清雄 亀井
Hisao Kawasaki
久夫 川崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56149520A priority Critical patent/JPS5852876A/ja
Publication of JPS5852876A publication Critical patent/JPS5852876A/ja
Publication of JPH0212017B2 publication Critical patent/JPH0212017B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP56149520A 1981-09-24 1981-09-24 砒化ガリウム半導体装置 Granted JPS5852876A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56149520A JPS5852876A (ja) 1981-09-24 1981-09-24 砒化ガリウム半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56149520A JPS5852876A (ja) 1981-09-24 1981-09-24 砒化ガリウム半導体装置

Publications (2)

Publication Number Publication Date
JPS5852876A true JPS5852876A (ja) 1983-03-29
JPH0212017B2 JPH0212017B2 (cs) 1990-03-16

Family

ID=15476928

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56149520A Granted JPS5852876A (ja) 1981-09-24 1981-09-24 砒化ガリウム半導体装置

Country Status (1)

Country Link
JP (1) JPS5852876A (cs)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59136974A (ja) * 1983-01-26 1984-08-06 Nec Corp 半導体装置
JPS6046075A (ja) * 1983-08-24 1985-03-12 Toshiba Corp 電界効果トランジスタ
JPS60123067A (ja) * 1983-12-08 1985-07-01 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JPS61114581A (ja) * 1984-11-09 1986-06-02 Matsushita Electric Ind Co Ltd ＧａＡｓ半導体装置
US6313534B1 (en) * 1998-03-25 2001-11-06 Sony Corporation Ohmic electrode, method and multi-layered structure for making same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59136974A (ja) * 1983-01-26 1984-08-06 Nec Corp 半導体装置
JPS6046075A (ja) * 1983-08-24 1985-03-12 Toshiba Corp 電界効果トランジスタ
JPS60123067A (ja) * 1983-12-08 1985-07-01 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JPS61114581A (ja) * 1984-11-09 1986-06-02 Matsushita Electric Ind Co Ltd ＧａＡｓ半導体装置
US6313534B1 (en) * 1998-03-25 2001-11-06 Sony Corporation Ohmic electrode, method and multi-layered structure for making same

Also Published As

Publication number Publication date
JPH0212017B2 (cs) 1990-03-16

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