JPS5852830A - 高耐圧半導体装置 - Google Patents

高耐圧半導体装置

Info

Publication number
JPS5852830A
JPS5852830A JP56149546A JP14954681A JPS5852830A JP S5852830 A JPS5852830 A JP S5852830A JP 56149546 A JP56149546 A JP 56149546A JP 14954681 A JP14954681 A JP 14954681A JP S5852830 A JPS5852830 A JP S5852830A
Authority
JP
Japan
Prior art keywords
film
oxide film
silicon oxide
silicon
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56149546A
Other languages
English (en)
Japanese (ja)
Other versions
JPS644665B2 (enrdf_load_stackoverflow
Inventor
Yasuhiro Mochizuki
康弘 望月
Akio Mimura
三村　秋男
Tatsuya Kamei
亀井　達弥
Masahiro Okamura
岡村　昌弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56149546A priority Critical patent/JPS5852830A/ja
Publication of JPS5852830A publication Critical patent/JPS5852830A/ja
Publication of JPS644665B2 publication Critical patent/JPS644665B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
JP56149546A 1981-09-24 1981-09-24 高耐圧半導体装置 Granted JPS5852830A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56149546A JPS5852830A (ja) 1981-09-24 1981-09-24 高耐圧半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56149546A JPS5852830A (ja) 1981-09-24 1981-09-24 高耐圧半導体装置

Publications (2)

Publication Number Publication Date
JPS5852830A true JPS5852830A (ja) 1983-03-29
JPS644665B2 JPS644665B2 (enrdf_load_stackoverflow) 1989-01-26

Family

ID=15477509

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56149546A Granted JPS5852830A (ja) 1981-09-24 1981-09-24 高耐圧半導体装置

Country Status (1)

Country Link
JP (1) JPS5852830A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61248481A (ja) * 1985-04-25 1986-11-05 Nippon Denso Co Ltd 半導体装置の製造方法
EP0756319A3 (en) * 1995-07-28 1998-01-07 Motorola, Inc. Reduced stress isolation for SOI devices and a method for fabricating

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51130171A (en) * 1975-05-07 1976-11-12 Sony Corp Semiconductor device
JPS57113257A (en) * 1981-01-06 1982-07-14 Oki Electric Ind Co Ltd Manufacture of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51130171A (en) * 1975-05-07 1976-11-12 Sony Corp Semiconductor device
JPS57113257A (en) * 1981-01-06 1982-07-14 Oki Electric Ind Co Ltd Manufacture of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61248481A (ja) * 1985-04-25 1986-11-05 Nippon Denso Co Ltd 半導体装置の製造方法
EP0756319A3 (en) * 1995-07-28 1998-01-07 Motorola, Inc. Reduced stress isolation for SOI devices and a method for fabricating
US6627511B1 (en) 1995-07-28 2003-09-30 Motorola, Inc. Reduced stress isolation for SOI devices and a method for fabricating

Also Published As

Publication number Publication date
JPS644665B2 (enrdf_load_stackoverflow) 1989-01-26

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