JPS5852830A - 高耐圧半導体装置 - Google Patents
高耐圧半導体装置Info
- Publication number
- JPS5852830A JPS5852830A JP56149546A JP14954681A JPS5852830A JP S5852830 A JPS5852830 A JP S5852830A JP 56149546 A JP56149546 A JP 56149546A JP 14954681 A JP14954681 A JP 14954681A JP S5852830 A JPS5852830 A JP S5852830A
- Authority
- JP
- Japan
- Prior art keywords
- film
- oxide film
- silicon oxide
- silicon
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56149546A JPS5852830A (ja) | 1981-09-24 | 1981-09-24 | 高耐圧半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56149546A JPS5852830A (ja) | 1981-09-24 | 1981-09-24 | 高耐圧半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5852830A true JPS5852830A (ja) | 1983-03-29 |
| JPS644665B2 JPS644665B2 (cs) | 1989-01-26 |
Family
ID=15477509
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56149546A Granted JPS5852830A (ja) | 1981-09-24 | 1981-09-24 | 高耐圧半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5852830A (cs) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61248481A (ja) * | 1985-04-25 | 1986-11-05 | Nippon Denso Co Ltd | 半導体装置の製造方法 |
| EP0756319A3 (en) * | 1995-07-28 | 1998-01-07 | Motorola, Inc. | Reduced stress isolation for SOI devices and a method for fabricating |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51130171A (en) * | 1975-05-07 | 1976-11-12 | Sony Corp | Semiconductor device |
| JPS57113257A (en) * | 1981-01-06 | 1982-07-14 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
-
1981
- 1981-09-24 JP JP56149546A patent/JPS5852830A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51130171A (en) * | 1975-05-07 | 1976-11-12 | Sony Corp | Semiconductor device |
| JPS57113257A (en) * | 1981-01-06 | 1982-07-14 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61248481A (ja) * | 1985-04-25 | 1986-11-05 | Nippon Denso Co Ltd | 半導体装置の製造方法 |
| EP0756319A3 (en) * | 1995-07-28 | 1998-01-07 | Motorola, Inc. | Reduced stress isolation for SOI devices and a method for fabricating |
| US6627511B1 (en) | 1995-07-28 | 2003-09-30 | Motorola, Inc. | Reduced stress isolation for SOI devices and a method for fabricating |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS644665B2 (cs) | 1989-01-26 |
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