JPS5850784A - 受光素子の製造方法 - Google Patents

受光素子の製造方法

Info

Publication number
JPS5850784A
JPS5850784A JP56150335A JP15033581A JPS5850784A JP S5850784 A JPS5850784 A JP S5850784A JP 56150335 A JP56150335 A JP 56150335A JP 15033581 A JP15033581 A JP 15033581A JP S5850784 A JPS5850784 A JP S5850784A
Authority
JP
Japan
Prior art keywords
layer
resulting
curved surface
heat treatment
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56150335A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6244865B2 (enrdf_load_stackoverflow
Inventor
Shuichi Mayumi
周一 真弓
Kunihiko Asahi
旭　国彦
Ichizo Kamei
亀井　市蔵
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp, Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electronics Corp
Priority to JP56150335A priority Critical patent/JPS5850784A/ja
Publication of JPS5850784A publication Critical patent/JPS5850784A/ja
Publication of JPS6244865B2 publication Critical patent/JPS6244865B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors

Landscapes

  • Light Receiving Elements (AREA)
JP56150335A 1981-09-21 1981-09-21 受光素子の製造方法 Granted JPS5850784A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56150335A JPS5850784A (ja) 1981-09-21 1981-09-21 受光素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56150335A JPS5850784A (ja) 1981-09-21 1981-09-21 受光素子の製造方法

Publications (2)

Publication Number Publication Date
JPS5850784A true JPS5850784A (ja) 1983-03-25
JPS6244865B2 JPS6244865B2 (enrdf_load_stackoverflow) 1987-09-22

Family

ID=15494753

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56150335A Granted JPS5850784A (ja) 1981-09-21 1981-09-21 受光素子の製造方法

Country Status (1)

Country Link
JP (1) JPS5850784A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04246868A (ja) * 1990-09-25 1992-09-02 Motorola Inc Ｐ−ｉ−ｎフォトダイオードおよびその効率を改善する方法
CN115274912A (zh) * 2022-08-01 2022-11-01 中国电子科技集团公司第四十四研究所 高空间分辨率的x射线探测器单元、探测器及其制作方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04246868A (ja) * 1990-09-25 1992-09-02 Motorola Inc Ｐ−ｉ−ｎフォトダイオードおよびその効率を改善する方法
CN115274912A (zh) * 2022-08-01 2022-11-01 中国电子科技集团公司第四十四研究所 高空间分辨率的x射线探测器单元、探测器及其制作方法
CN115274912B (zh) * 2022-08-01 2024-01-30 中国电子科技集团公司第四十四研究所 高空间分辨率的x射线探测器单元、探测器及其制作方法

Also Published As

Publication number Publication date
JPS6244865B2 (enrdf_load_stackoverflow) 1987-09-22

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