JPS5850780A - 電界効果トランジスタ - Google Patents

電界効果トランジスタ

Info

Publication number
JPS5850780A
JPS5850780A JP56149170A JP14917081A JPS5850780A JP S5850780 A JPS5850780 A JP S5850780A JP 56149170 A JP56149170 A JP 56149170A JP 14917081 A JP14917081 A JP 14917081A JP S5850780 A JPS5850780 A JP S5850780A
Authority
JP
Japan
Prior art keywords
electrode
gate
source
gate electrode
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56149170A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0212016B2 (enrdf_load_stackoverflow
Inventor
Kazuhiko Honjo
和彦 本城
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56149170A priority Critical patent/JPS5850780A/ja
Publication of JPS5850780A publication Critical patent/JPS5850780A/ja
Publication of JPH0212016B2 publication Critical patent/JPH0212016B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/873—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] having multiple gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP56149170A 1981-09-21 1981-09-21 電界効果トランジスタ Granted JPS5850780A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56149170A JPS5850780A (ja) 1981-09-21 1981-09-21 電界効果トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56149170A JPS5850780A (ja) 1981-09-21 1981-09-21 電界効果トランジスタ

Publications (2)

Publication Number Publication Date
JPS5850780A true JPS5850780A (ja) 1983-03-25
JPH0212016B2 JPH0212016B2 (enrdf_load_stackoverflow) 1990-03-16

Family

ID=15469324

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56149170A Granted JPS5850780A (ja) 1981-09-21 1981-09-21 電界効果トランジスタ

Country Status (1)

Country Link
JP (1) JPS5850780A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5972773A (ja) * 1982-10-20 1984-04-24 Matsushita Electric Ind Co Ltd 電界効果トランジスタ
JPS6349017A (ja) * 1986-08-19 1988-03-01 株式会社クボタ 脱穀機
US4972237A (en) * 1988-06-13 1990-11-20 Fujitsu Limited Metal-semiconductor field effect transistor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5972773A (ja) * 1982-10-20 1984-04-24 Matsushita Electric Ind Co Ltd 電界効果トランジスタ
JPS6349017A (ja) * 1986-08-19 1988-03-01 株式会社クボタ 脱穀機
US4972237A (en) * 1988-06-13 1990-11-20 Fujitsu Limited Metal-semiconductor field effect transistor device

Also Published As

Publication number Publication date
JPH0212016B2 (enrdf_load_stackoverflow) 1990-03-16

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