JPS5846650A - 電極配線の製造方法 - Google Patents
電極配線の製造方法Info
- Publication number
- JPS5846650A JPS5846650A JP14479581A JP14479581A JPS5846650A JP S5846650 A JPS5846650 A JP S5846650A JP 14479581 A JP14479581 A JP 14479581A JP 14479581 A JP14479581 A JP 14479581A JP S5846650 A JPS5846650 A JP S5846650A
- Authority
- JP
- Japan
- Prior art keywords
- melting point
- wiring
- high melting
- point metal
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 35
- 238000002844 melting Methods 0.000 claims abstract description 32
- 229910052751 metal Inorganic materials 0.000 claims abstract description 30
- 239000002184 metal Substances 0.000 claims abstract description 30
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 25
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000004065 semiconductor Substances 0.000 claims abstract description 20
- 230000008569 process Effects 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 10
- 230000008018 melting Effects 0.000 claims description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 239000004020 conductor Substances 0.000 claims description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 4
- 229910000077 silane Inorganic materials 0.000 claims 4
- 239000003870 refractory metal Substances 0.000 claims 1
- 239000011241 protective layer Substances 0.000 abstract description 21
- 239000010410 layer Substances 0.000 abstract description 14
- 230000003647 oxidation Effects 0.000 abstract description 7
- 238000007254 oxidation reaction Methods 0.000 abstract description 7
- 230000001590 oxidative effect Effects 0.000 abstract description 7
- 239000012535 impurity Substances 0.000 abstract description 6
- 238000002955 isolation Methods 0.000 abstract description 6
- 239000002253 acid Substances 0.000 abstract description 5
- 238000005566 electron beam evaporation Methods 0.000 abstract description 5
- 238000005530 etching Methods 0.000 abstract description 4
- 238000005468 ion implantation Methods 0.000 abstract description 4
- 238000001312 dry etching Methods 0.000 abstract description 2
- 238000001459 lithography Methods 0.000 abstract 1
- 238000005406 washing Methods 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 241000208140 Acer Species 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000501 effect on contamination Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 235000013305 food Nutrition 0.000 description 1
- 231100001261 hazardous Toxicity 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14479581A JPS5846650A (ja) | 1981-09-16 | 1981-09-16 | 電極配線の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14479581A JPS5846650A (ja) | 1981-09-16 | 1981-09-16 | 電極配線の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5846650A true JPS5846650A (ja) | 1983-03-18 |
| JPH0117255B2 JPH0117255B2 (enrdf_load_stackoverflow) | 1989-03-29 |
Family
ID=15370625
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14479581A Granted JPS5846650A (ja) | 1981-09-16 | 1981-09-16 | 電極配線の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5846650A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6193648A (ja) * | 1984-10-15 | 1986-05-12 | Fujitsu Ltd | 半導体装置の製造方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5615070A (en) * | 1979-07-18 | 1981-02-13 | Fujitsu Ltd | Semiconductor device |
-
1981
- 1981-09-16 JP JP14479581A patent/JPS5846650A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5615070A (en) * | 1979-07-18 | 1981-02-13 | Fujitsu Ltd | Semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6193648A (ja) * | 1984-10-15 | 1986-05-12 | Fujitsu Ltd | 半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0117255B2 (enrdf_load_stackoverflow) | 1989-03-29 |
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