JPS584471B1 - - Google Patents

Info

Publication number
JPS584471B1
JPS584471B1 JP6454572A JP6454572A JPS584471B1 JP S584471 B1 JPS584471 B1 JP S584471B1 JP 6454572 A JP6454572 A JP 6454572A JP 6454572 A JP6454572 A JP 6454572A JP S584471 B1 JPS584471 B1 JP S584471B1
Authority
JP
Japan
Prior art keywords
preparation
devices fabricated
pertains
disclosure
electroluminescent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6454572A
Other languages
English (en)
Japanese (ja)
Inventor
Warren Olley Groves
Arno Henry Herzog
Magnus George Craford
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Monsanto Co
Original Assignee
Monsanto Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Monsanto Co filed Critical Monsanto Co
Publication of JPS584471B1 publication Critical patent/JPS584471B1/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/8242—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/056—Gallium arsenide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/057—Gas flow control
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/059—Germanium on silicon or Ge-Si on III-V
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/067—Graded energy gap
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/099—LED, multicolor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/119—Phosphides of gallium or indium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/135—Removal of substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/918—Special or nonstandard dopant

Landscapes

  • Led Devices (AREA)
JP6454572A 1971-06-30 1972-06-29 Granted JPS584471B1 (en, 2012)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15831271A 1971-06-30 1971-06-30

Publications (1)

Publication Number Publication Date
JPS584471B1 true JPS584471B1 (en, 2012) 1983-01-26

Family

ID=22567541

Family Applications (2)

Application Number Title Priority Date Filing Date
JP6454572A Granted JPS584471B1 (en, 2012) 1971-06-30 1972-06-29
JP57098575A Expired JPS6057214B2 (ja) 1971-06-30 1982-06-10 電気発光物質の製法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP57098575A Expired JPS6057214B2 (ja) 1971-06-30 1982-06-10 電気発光物質の製法

Country Status (4)

Country Link
US (2) US3725749A (en, 2012)
JP (2) JPS584471B1 (en, 2012)
BE (1) BE785633A (en, 2012)
DE (1) DE2231926B2 (en, 2012)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3964940A (en) * 1971-09-10 1976-06-22 Plessey Handel Und Investments A.G. Methods of producing gallium phosphide yellow light emitting diodes
FR2175571B1 (en, 2012) * 1972-03-14 1978-08-25 Radiotechnique Compelec
US3790868A (en) * 1972-10-27 1974-02-05 Hewlett Packard Co Efficient red emitting electroluminescent semiconductor
JPS5325634B2 (en, 2012) * 1973-04-04 1978-07-27
US3925119A (en) * 1973-05-07 1975-12-09 Ibm Method for vapor deposition of gallium arsenide phosphide upon gallium arsenide substrates
US3985590A (en) * 1973-06-13 1976-10-12 Harris Corporation Process for forming heteroepitaxial structure
US3979271A (en) * 1973-07-23 1976-09-07 Westinghouse Electric Corporation Deposition of solid semiconductor compositions and novel semiconductor materials
JPS5137915B2 (en, 2012) * 1973-10-19 1976-10-19
GB1477415A (en) * 1974-06-06 1977-06-22 Ibm Light emitting diodes
US4154630A (en) * 1975-01-07 1979-05-15 U.S. Philips Corporation Method of manufacturing semiconductor devices having isoelectronically built-in nitrogen and having the p-n junction formed subsequent to the deposition process
US4198251A (en) * 1975-09-18 1980-04-15 U.S. Philips Corporation Method of making polychromatic monolithic electroluminescent assembly utilizing epitaxial deposition of graded layers
US4214926A (en) * 1976-07-02 1980-07-29 Tdk Electronics Co., Ltd. Method of doping IIb or VIb group elements into a boron phosphide semiconductor
JPS5856963B2 (ja) * 1977-05-06 1983-12-17 三菱化成ポリテック株式会社 電子発光化合物半導体の製造方法
US4211586A (en) * 1977-09-21 1980-07-08 International Business Machines Corporation Method of fabricating multicolor light emitting diode array utilizing stepped graded epitaxial layers
JPS581539B2 (ja) * 1978-07-07 1983-01-11 三菱化成ポリテック株式会社 エピタキシヤルウエハ−
JPS61291491A (ja) * 1985-06-19 1986-12-22 Mitsubishi Monsanto Chem Co りん化ひ化ガリウム混晶エピタキシヤルウエハ
JPH02249400A (ja) * 1989-03-23 1990-10-05 Matsushita Electric Ind Co Ltd 音質評価装置
DE3940853A1 (de) * 1989-12-11 1991-06-13 Balzers Hochvakuum Anordnung zur niveauregelung verfluessigter gase
DE4011145A1 (de) * 1990-04-06 1991-10-10 Telefunken Electronic Gmbh Lumineszenz-halbleiterelement
JP3436379B2 (ja) * 1992-07-28 2003-08-11 三菱化学株式会社 りん化ひ化ガリウムエピタキシャルウエハ
TW498102B (en) * 1998-12-28 2002-08-11 Futaba Denshi Kogyo Kk A process for preparing GaN fluorescent substance
US7204050B2 (en) * 2003-12-29 2007-04-17 Sargent Manufacturing Company Exit device with lighted touchpad
US7819981B2 (en) * 2004-10-26 2010-10-26 Advanced Technology Materials, Inc. Methods for cleaning ion implanter components
EP1899040A2 (en) * 2005-06-22 2008-03-19 Advanced Technology Materials, Inc. Apparatus and process for integrated gas blending
US7943204B2 (en) 2005-08-30 2011-05-17 Advanced Technology Materials, Inc. Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation
JP2011512015A (ja) 2008-02-11 2011-04-14 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 半導体処理システムにおけるイオン源の洗浄
US20110021011A1 (en) * 2009-07-23 2011-01-27 Advanced Technology Materials, Inc. Carbon materials for carbon implantation
US8598022B2 (en) 2009-10-27 2013-12-03 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
KR20200098716A (ko) 2012-02-14 2020-08-20 엔테그리스, 아이엔씨. 주입 빔 및 소스 수명 성능 개선을 위한 탄소 도판트 기체 및 동축류

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3617820A (en) * 1966-11-18 1971-11-02 Monsanto Co Injection-luminescent diodes
US3462320A (en) * 1966-11-21 1969-08-19 Bell Telephone Labor Inc Solution growth of nitrogen doped gallium phosphide
US3560275A (en) * 1968-11-08 1971-02-02 Rca Corp Fabricating semiconductor devices
JPS4921991B1 (en, 2012) * 1969-06-27 1974-06-05
NL153030B (nl) * 1969-09-05 1977-04-15 Hitachi Ltd Licht-uitzendende halfgeleiderdiode.
US3603833A (en) * 1970-02-16 1971-09-07 Bell Telephone Labor Inc Electroluminescent junction semiconductor with controllable combination colors
US3646406A (en) * 1970-06-30 1972-02-29 Bell Telephone Labor Inc Electroluminescent pnjunction diodes with nonuniform distribution of isoelectronic traps
US3873382A (en) * 1971-06-30 1975-03-25 Monsanto Co Process for the preparation of semiconductor materials and devices

Also Published As

Publication number Publication date
USRE29845E (en) 1978-11-21
US3725749A (en) 1973-04-03
JPS6057214B2 (ja) 1985-12-13
DE2231926A1 (de) 1973-01-18
BE785633A (fr) 1972-12-29
JPS58105539A (ja) 1983-06-23
DE2231926B2 (de) 1981-06-04

Similar Documents

Publication Publication Date Title
JPS584471B1 (en, 2012)
CA963566A (en) Electroluminescent semiconductor device
CA963969A (en) Electroluminescent semiconductor device
CA954421A (en) Semiconductor epitaxial growth from solution
GB1357831A (en) Etchants for semiconductor compounds
AU453969B2 (en) Semiconductor diode
GB1345818A (en) Semiconductor devices
CA978660A (en) Beam-lead semiconductor component
CA966229A (en) Single-phase charge-coupled semiconductor device
AU464570B2 (en) Electroluminescent semiconductor devices
AU459526B2 (en) Integrated semiconductor structure
ES437033A1 (es) Perfeccionamientos introducidos en un dispositivo semicon- ductor limitado por carga espacial.
NO137598C (no) Fremgangsmaate til fremstilling av ren, krystallinsk penicillinacylase
GB1395238A (en) Semiconductor devices
GB1345186A (en) Semiconductor devices
CA1014693A (en) Organic semiconductors
CA966573A (en) Semiconductor device having an electroluminescent diode
CA981800A (en) Uhf band semiconductor package
CA954426A (en) Chemical growth of insulating layers on gallium arsenide
JPS5214377A (en) Semiconductor device
CA861689A (en) Semiconductor oscillator
CA889532A (en) Mesa-type semiconductor device
AU459926B2 (en) Electroluminescent semiconductor device
CA888985A (en) Semiconductor devices having improved power capabilities
AU2555871A (en) Electroluminescent semiconductor device