JPS5842368A - 固体撮像素子 - Google Patents

固体撮像素子

Info

Publication number
JPS5842368A
JPS5842368A JP56140670A JP14067081A JPS5842368A JP S5842368 A JPS5842368 A JP S5842368A JP 56140670 A JP56140670 A JP 56140670A JP 14067081 A JP14067081 A JP 14067081A JP S5842368 A JPS5842368 A JP S5842368A
Authority
JP
Japan
Prior art keywords
light
solid
layer
state image
image sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56140670A
Other languages
English (en)
Japanese (ja)
Other versions
JPH031873B2 (enrdf_load_stackoverflow
Inventor
Takashi Murakami
隆 村上
Kazuharu Kawashima
川島　和春
Kenji Matsumoto
松本　建二
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujinon Corp
Fujifilm Holdings Corp
Original Assignee
Fujinon Corp
Fuji Photo Film Co Ltd
Fuji Photo Optical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujinon Corp, Fuji Photo Film Co Ltd, Fuji Photo Optical Co Ltd filed Critical Fujinon Corp
Priority to JP56140670A priority Critical patent/JPS5842368A/ja
Publication of JPS5842368A publication Critical patent/JPS5842368A/ja
Publication of JPH031873B2 publication Critical patent/JPH031873B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers

Landscapes

  • Transforming Light Signals Into Electric Signals (AREA)
  • Color Television Image Signal Generators (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP56140670A 1981-09-07 1981-09-07 固体撮像素子 Granted JPS5842368A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56140670A JPS5842368A (ja) 1981-09-07 1981-09-07 固体撮像素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56140670A JPS5842368A (ja) 1981-09-07 1981-09-07 固体撮像素子

Publications (2)

Publication Number Publication Date
JPS5842368A true JPS5842368A (ja) 1983-03-11
JPH031873B2 JPH031873B2 (enrdf_load_stackoverflow) 1991-01-11

Family

ID=15274023

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56140670A Granted JPS5842368A (ja) 1981-09-07 1981-09-07 固体撮像素子

Country Status (1)

Country Link
JP (1) JPS5842368A (enrdf_load_stackoverflow)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6195680A (ja) * 1984-10-16 1986-05-14 Matsushita Electric Ind Co Ltd 固体撮像装置
JPS6226858A (ja) * 1985-07-26 1987-02-04 Stanley Electric Co Ltd 遮光層を有する薄膜トランジスタ−アセンブリ−
JPS63237465A (ja) * 1987-03-25 1988-10-03 Sony Corp 半導体装置
JPH0364968A (ja) * 1989-08-03 1991-03-20 Matsushita Electron Corp 固体撮像素子およびその製造方法
JPH03147366A (ja) * 1989-11-01 1991-06-24 Matsushita Electron Corp 固体撮像装置の製造方法
JPH0456223A (ja) * 1990-06-25 1992-02-24 Matsushita Electron Corp シリコン酸化膜の形成方法および薄膜形成装置
US6333270B1 (en) 1998-05-18 2001-12-25 Nec Corporation Etching gas used for plasma-enhanced etching of vanadium oxide film and method of plasma-enhanced etching of vanadium oxide film

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51136234A (en) * 1975-05-21 1976-11-25 Toshiba Corp Solid state image device
JPS52123824A (en) * 1976-04-10 1977-10-18 Sony Corp Solid pikup element
JPS55179072U (enrdf_load_stackoverflow) * 1979-06-08 1980-12-23

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51136234A (en) * 1975-05-21 1976-11-25 Toshiba Corp Solid state image device
JPS52123824A (en) * 1976-04-10 1977-10-18 Sony Corp Solid pikup element
JPS55179072U (enrdf_load_stackoverflow) * 1979-06-08 1980-12-23

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6195680A (ja) * 1984-10-16 1986-05-14 Matsushita Electric Ind Co Ltd 固体撮像装置
JPS6226858A (ja) * 1985-07-26 1987-02-04 Stanley Electric Co Ltd 遮光層を有する薄膜トランジスタ−アセンブリ−
JPS63237465A (ja) * 1987-03-25 1988-10-03 Sony Corp 半導体装置
JPH0364968A (ja) * 1989-08-03 1991-03-20 Matsushita Electron Corp 固体撮像素子およびその製造方法
JPH03147366A (ja) * 1989-11-01 1991-06-24 Matsushita Electron Corp 固体撮像装置の製造方法
JPH0456223A (ja) * 1990-06-25 1992-02-24 Matsushita Electron Corp シリコン酸化膜の形成方法および薄膜形成装置
US6333270B1 (en) 1998-05-18 2001-12-25 Nec Corporation Etching gas used for plasma-enhanced etching of vanadium oxide film and method of plasma-enhanced etching of vanadium oxide film

Also Published As

Publication number Publication date
JPH031873B2 (enrdf_load_stackoverflow) 1991-01-11

Similar Documents

Publication Publication Date Title
US6507083B1 (en) Image sensor with light-reflecting via structures
JP2009099591A (ja) 固体撮像素子及びその製造方法
JPS61182533A (ja) 基板内で一体化された独立コールドスクリーンを備えた光検出用マトリツクスデバイスおよびその製造方法
JPS5842368A (ja) 固体撮像素子
JPH04196167A (ja) 固体撮像素子
JPH04259256A (ja) 固体撮像装置
JP3308778B2 (ja) 固体撮像装置の製造方法
JPH05283661A (ja) 固体撮像装置
JPH04212459A (ja) 固体撮像素子
JP4618765B2 (ja) 撮像素子、該撮像素子を備えたデジタルカメラ
JPH02244761A (ja) 固体撮像素子およびその製造方法
JPS58171A (ja) 固体撮像素子
JPH0269978A (ja) 積層型固体撮像装置
JPS61154283A (ja) 固体撮像素子
JPH05299625A (ja) 固体撮像素子およびその製造方法
JPS6212154A (ja) 固体撮像装置
JP3358375B2 (ja) 固体撮像素子とその製造方法
JPS59163860A (ja) 固体撮像素子
JPS6386474A (ja) 固体撮像装置
JP2926968B2 (ja) カラーイメージセンサ及びカラー画像読み取り方法
JPH065827A (ja) 固体撮像素子及びその製造方法
JPH04129268A (ja) 固体撮像素子
JP2519030B2 (ja) 光電変換装置
JPH05218370A (ja) 固体撮像素子の製造方法
JPS60171A (ja) 固体撮像素子