JPS5842231A - パターン形成方法 - Google Patents

パターン形成方法

Info

Publication number
JPS5842231A
JPS5842231A JP14024681A JP14024681A JPS5842231A JP S5842231 A JPS5842231 A JP S5842231A JP 14024681 A JP14024681 A JP 14024681A JP 14024681 A JP14024681 A JP 14024681A JP S5842231 A JPS5842231 A JP S5842231A
Authority
JP
Japan
Prior art keywords
resist
etched
temperature
turn
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14024681A
Other languages
English (en)
Japanese (ja)
Other versions
JPH03770B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Toshihiko Yoshida
俊彦 吉田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14024681A priority Critical patent/JPS5842231A/ja
Publication of JPS5842231A publication Critical patent/JPS5842231A/ja
Publication of JPH03770B2 publication Critical patent/JPH03770B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP14024681A 1981-09-08 1981-09-08 パターン形成方法 Granted JPS5842231A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14024681A JPS5842231A (ja) 1981-09-08 1981-09-08 パターン形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14024681A JPS5842231A (ja) 1981-09-08 1981-09-08 パターン形成方法

Publications (2)

Publication Number Publication Date
JPS5842231A true JPS5842231A (ja) 1983-03-11
JPH03770B2 JPH03770B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-01-08

Family

ID=15264308

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14024681A Granted JPS5842231A (ja) 1981-09-08 1981-09-08 パターン形成方法

Country Status (1)

Country Link
JP (1) JPS5842231A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4790209A (en) * 1985-08-29 1988-12-13 Toyoda Gosei Co., Ltd. Impact energy absorbing steering wheel
US4829848A (en) * 1985-01-22 1989-05-16 Kabushiki Kaisha Tokai-Rika-Denki-Seisakusho Energy absorbing apparatus for steering wheel
US4920821A (en) * 1985-01-22 1990-05-01 Kabushiki Kaishma Tokai-Rika-Denki-Seisakusho Steering wheel for vehicle
JPH0430799U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1990-07-05 1992-03-12

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4911577A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1972-06-01 1974-02-01
JPS50154066A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1974-05-31 1975-12-11
JPS54146966A (en) * 1978-05-10 1979-11-16 Nec Corp Pattern forming method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4911577A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1972-06-01 1974-02-01
JPS50154066A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1974-05-31 1975-12-11
JPS54146966A (en) * 1978-05-10 1979-11-16 Nec Corp Pattern forming method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4829848A (en) * 1985-01-22 1989-05-16 Kabushiki Kaisha Tokai-Rika-Denki-Seisakusho Energy absorbing apparatus for steering wheel
US4920821A (en) * 1985-01-22 1990-05-01 Kabushiki Kaishma Tokai-Rika-Denki-Seisakusho Steering wheel for vehicle
US4790209A (en) * 1985-08-29 1988-12-13 Toyoda Gosei Co., Ltd. Impact energy absorbing steering wheel
JPH0430799U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1990-07-05 1992-03-12

Also Published As

Publication number Publication date
JPH03770B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-01-08

Similar Documents

Publication Publication Date Title
JPH08190203A (ja) レジスト パターン形成方法
JPS59153A (ja) プラズマエツチングに耐性を有するレジストマスクを形成する方法
JP2829555B2 (ja) 微細レジストパターンの形成方法
US4451554A (en) Method of forming thin-film pattern
JP3471335B2 (ja) 半導体素子の微細パターンの形成方法
JPS5842231A (ja) パターン形成方法
JPH0143450B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH07135140A (ja) レジストパターン形成方法
JP2002198283A (ja) レジストパターン形成方法
JP2000031025A (ja) レジストパターンの形成方法
JP3837279B2 (ja) フォトレジストパターン形成方法及び半導体素子の製造方法
JPS6364772B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP2692059B2 (ja) 電子線レジストパターンの形成方法
JP3241809B2 (ja) 位相シフト層を有するフォトマスクの製造方法
JPH0473651A (ja) 位相シフトマスクの形成方法
JPH0319540B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH06112119A (ja) レジストパターン形成方法
JPS588131B2 (ja) 半導体装置の製造方法
JPH0836254A (ja) マスクの製造方法
JPS6086543A (ja) 微細パタ−ン形成方法
JPS58184147A (ja) 写真蝕刻用ホト・マスクの製造方法
JPS5836494B2 (ja) シヤシンシヨツコクヨウホト マスクノセイゾウホウホウ
JPS62150350A (ja) パタ−ン形成方法
JPS63138736A (ja) レジストのパタ−ニング方法
JPH03116725A (ja) レジスト剥離方法