JPS5840852A - 相補型ｍｏｓ半導体装置及びその製造方法 - Google Patents

相補型ｍｏｓ半導体装置及びその製造方法

Info

Publication number
JPS5840852A
JPS5840852A JP56138833A JP13883381A JPS5840852A JP S5840852 A JPS5840852 A JP S5840852A JP 56138833 A JP56138833 A JP 56138833A JP 13883381 A JP13883381 A JP 13883381A JP S5840852 A JPS5840852 A JP S5840852A
Authority
JP
Japan
Prior art keywords
substrate
type
region
conductivity type
isolation region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56138833A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0324069B2 (enrdf_load_stackoverflow
Inventor
Satoru Maeda
哲 前田
Hiroshi Iwai
洋 岩井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56138833A priority Critical patent/JPS5840852A/ja
Priority to US06/307,877 priority patent/US4560421A/en
Publication of JPS5840852A publication Critical patent/JPS5840852A/ja
Publication of JPH0324069B2 publication Critical patent/JPH0324069B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76294—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using selective deposition of single crystal silicon, i.e. SEG techniques

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP56138833A 1980-10-02 1981-09-03 相補型ｍｏｓ半導体装置及びその製造方法 Granted JPS5840852A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP56138833A JPS5840852A (ja) 1981-09-03 1981-09-03 相補型ｍｏｓ半導体装置及びその製造方法
US06/307,877 US4560421A (en) 1980-10-02 1981-10-02 Semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56138833A JPS5840852A (ja) 1981-09-03 1981-09-03 相補型ｍｏｓ半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JPS5840852A true JPS5840852A (ja) 1983-03-09
JPH0324069B2 JPH0324069B2 (enrdf_load_stackoverflow) 1991-04-02

Family

ID=15231280

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56138833A Granted JPS5840852A (ja) 1980-10-02 1981-09-03 相補型ｍｏｓ半導体装置及びその製造方法

Country Status (1)

Country Link
JP (1) JPS5840852A (enrdf_load_stackoverflow)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5961119A (ja) * 1982-09-30 1984-04-07 Fujitsu Ltd 半導体装置の製造方法
JPS6030169A (ja) * 1983-07-29 1985-02-15 Toshiba Corp 相補型ｍｏｓ半導体装置及びその製造方法
JPS6070757A (ja) * 1983-09-28 1985-04-22 Hitachi Ltd 半導体集積回路
JPS6074664A (ja) * 1983-09-30 1985-04-26 Toshiba Corp 相補型ｍｏｓ半導体装置の製造方法
JPS6089957A (ja) * 1983-10-24 1985-05-20 Nippon Telegr & Teleph Corp <Ntt> 相補形半導体装置
JPH04231668A (ja) * 1990-06-26 1992-08-20 Mercedes Benz Ag 内燃機関のシリンダヘッドの吸込み通路における蒸発装置
JPH04231669A (ja) * 1990-06-26 1992-08-20 Mercedes Benz Ag 内燃機関のシリンダヘッド
US5851856A (en) * 1993-12-03 1998-12-22 Yamaha Corporation Manufacture of application-specific IC

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5961119A (ja) * 1982-09-30 1984-04-07 Fujitsu Ltd 半導体装置の製造方法
JPS6030169A (ja) * 1983-07-29 1985-02-15 Toshiba Corp 相補型ｍｏｓ半導体装置及びその製造方法
JPS6070757A (ja) * 1983-09-28 1985-04-22 Hitachi Ltd 半導体集積回路
JPS6074664A (ja) * 1983-09-30 1985-04-26 Toshiba Corp 相補型ｍｏｓ半導体装置の製造方法
JPS6089957A (ja) * 1983-10-24 1985-05-20 Nippon Telegr & Teleph Corp <Ntt> 相補形半導体装置
JPH04231668A (ja) * 1990-06-26 1992-08-20 Mercedes Benz Ag 内燃機関のシリンダヘッドの吸込み通路における蒸発装置
JPH04231669A (ja) * 1990-06-26 1992-08-20 Mercedes Benz Ag 内燃機関のシリンダヘッド
US5851856A (en) * 1993-12-03 1998-12-22 Yamaha Corporation Manufacture of application-specific IC

Also Published As

Publication number Publication date
JPH0324069B2 (enrdf_load_stackoverflow) 1991-04-02

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