JPS5834925A - 液相エピタキシヤル成長装置 - Google Patents

液相エピタキシヤル成長装置

Info

Publication number
JPS5834925A
JPS5834925A JP13367081A JP13367081A JPS5834925A JP S5834925 A JPS5834925 A JP S5834925A JP 13367081 A JP13367081 A JP 13367081A JP 13367081 A JP13367081 A JP 13367081A JP S5834925 A JPS5834925 A JP S5834925A
Authority
JP
Japan
Prior art keywords
substrate
liquid phase
liquid
vessel
quartz
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13367081A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0338736B2 (enrdf_load_html_response
Inventor
Michiharu Ito
伊藤　道春
Mitsuo Yoshikawa
吉河　満男
Shigeki Hamashima
濱嶋　茂樹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13367081A priority Critical patent/JPS5834925A/ja
Publication of JPS5834925A publication Critical patent/JPS5834925A/ja
Publication of JPH0338736B2 publication Critical patent/JPH0338736B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/024—Group 12/16 materials
    • H01L21/02411—Tellurides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02562—Tellurides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP13367081A 1981-08-25 1981-08-25 液相エピタキシヤル成長装置 Granted JPS5834925A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13367081A JPS5834925A (ja) 1981-08-25 1981-08-25 液相エピタキシヤル成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13367081A JPS5834925A (ja) 1981-08-25 1981-08-25 液相エピタキシヤル成長装置

Publications (2)

Publication Number Publication Date
JPS5834925A true JPS5834925A (ja) 1983-03-01
JPH0338736B2 JPH0338736B2 (enrdf_load_html_response) 1991-06-11

Family

ID=15110157

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13367081A Granted JPS5834925A (ja) 1981-08-25 1981-08-25 液相エピタキシヤル成長装置

Country Status (1)

Country Link
JP (1) JPS5834925A (enrdf_load_html_response)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57194516A (en) * 1981-05-26 1982-11-30 Toyo Aluminium Kk Aluminum foil for electrolytic condenser
US6855408B2 (en) 2002-01-25 2005-02-15 Showa Denko K.K. Composite metal material and method for manufacturing the same, etched metal material and method for manufacturing the same and electrolytic capacitor
US11172720B2 (en) 2016-06-14 2021-11-16 Darryl Rodney FLACK Helmet with chin crush zone and integrated ventilation

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52144271A (en) * 1976-05-27 1977-12-01 Toshiba Corp Preparation of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52144271A (en) * 1976-05-27 1977-12-01 Toshiba Corp Preparation of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57194516A (en) * 1981-05-26 1982-11-30 Toyo Aluminium Kk Aluminum foil for electrolytic condenser
US6855408B2 (en) 2002-01-25 2005-02-15 Showa Denko K.K. Composite metal material and method for manufacturing the same, etched metal material and method for manufacturing the same and electrolytic capacitor
US11172720B2 (en) 2016-06-14 2021-11-16 Darryl Rodney FLACK Helmet with chin crush zone and integrated ventilation

Also Published As

Publication number Publication date
JPH0338736B2 (enrdf_load_html_response) 1991-06-11

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