JPS5833888A - 半導体レ−ザ - Google Patents

半導体レ−ザ

Info

Publication number
JPS5833888A
JPS5833888A JP13314081A JP13314081A JPS5833888A JP S5833888 A JPS5833888 A JP S5833888A JP 13314081 A JP13314081 A JP 13314081A JP 13314081 A JP13314081 A JP 13314081A JP S5833888 A JPS5833888 A JP S5833888A
Authority
JP
Japan
Prior art keywords
semiconductor
layer
active layer
insulating substrate
recess
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13314081A
Other languages
English (en)
Japanese (ja)
Other versions
JPH049393B2 (enExample
Inventor
Takashi Matsuoka
隆志 松岡
Haruo Nagai
治男 永井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP13314081A priority Critical patent/JPS5833888A/ja
Publication of JPS5833888A publication Critical patent/JPS5833888A/ja
Publication of JPH049393B2 publication Critical patent/JPH049393B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP13314081A 1981-08-25 1981-08-25 半導体レ−ザ Granted JPS5833888A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13314081A JPS5833888A (ja) 1981-08-25 1981-08-25 半導体レ−ザ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13314081A JPS5833888A (ja) 1981-08-25 1981-08-25 半導体レ−ザ

Publications (2)

Publication Number Publication Date
JPS5833888A true JPS5833888A (ja) 1983-02-28
JPH049393B2 JPH049393B2 (enExample) 1992-02-20

Family

ID=15097678

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13314081A Granted JPS5833888A (ja) 1981-08-25 1981-08-25 半導体レ−ザ

Country Status (1)

Country Link
JP (1) JPS5833888A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0740376A1 (en) * 1995-04-28 1996-10-30 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser diode and manufacturing method for the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52135281A (en) * 1976-05-06 1977-11-12 Mitsubishi Electric Corp Semiconductor device
JPS54123887A (en) * 1978-03-17 1979-09-26 Matsushita Electric Ind Co Ltd Photo integrated citcuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52135281A (en) * 1976-05-06 1977-11-12 Mitsubishi Electric Corp Semiconductor device
JPS54123887A (en) * 1978-03-17 1979-09-26 Matsushita Electric Ind Co Ltd Photo integrated citcuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0740376A1 (en) * 1995-04-28 1996-10-30 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser diode and manufacturing method for the same
US5701321A (en) * 1995-04-28 1997-12-23 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser producing short wavelength light

Also Published As

Publication number Publication date
JPH049393B2 (enExample) 1992-02-20

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