JPS5825743B2 - 表面安定化方法 - Google Patents

表面安定化方法

Info

Publication number
JPS5825743B2
JPS5825743B2 JP57043065A JP4306582A JPS5825743B2 JP S5825743 B2 JPS5825743 B2 JP S5825743B2 JP 57043065 A JP57043065 A JP 57043065A JP 4306582 A JP4306582 A JP 4306582A JP S5825743 B2 JPS5825743 B2 JP S5825743B2
Authority
JP
Japan
Prior art keywords
layer
corrosion
rie
aluminum
air
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57043065A
Other languages
English (en)
Other versions
JPS583983A (ja
Inventor
ジエラルデイン・コーギン・シユワルツ
ジエローム・マイケル・エルドリツジ
マイケル・ハイウー・リー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS583983A publication Critical patent/JPS583983A/ja
Publication of JPS5825743B2 publication Critical patent/JPS5825743B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02244—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
    • C23C8/10—Oxidising
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/20—Acidic compositions for etching aluminium or alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31683—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of metallic layers, e.g. Al deposited on the body, e.g. formation of multi-layer insulating structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3

Description

【発明の詳細な説明】 本発明の分野 本発明は反応性イオン食刻（ＲＩＥ）によりパターン化
されたアルミニウムを基材とする合金の層を表面安定化
するための方法に係る。
本発明の目的は、パターン化処理後に室内の空気中で上
記層に生じる腐食を最小限にすることである。
先行技術 例えば４％のＣｕを含むＡ７の如き、アルミニウムを基
材とする導体層をＲＩＥによりパターン化する方法は超
小型回路素子の製造に用いられ得る方法である。
ＲＩＥは超小型回路の製造に有利な点を多く有している
が、層の表面領域中に不純物（炭素及び塩素）及び機械
的損傷を導入することにより、形成されたＡ７又は１１
’合金の導体路の空気による腐食を促進し得る。
従って、上記金属が室内の空気にさらされたときに形成
されるＡｌ２Ｏ３表面層は、その表面安定化の能力に於
て著しく劣っている。
この問題は、米国特許第４１８３７８１号の明細書に記
載されている如く、食刻された導体を洗浄してから１気
圧の０２中で略３５０℃に於て酸化することによって、
部分的には解決されている。
上記の米国特許第４１８３７８１号の明細書は、ＲＩＥ
により形成されたアルミニウムの超小型回路のための安
定化方法について開示している。
該特許明細書は、この種の製造方法の例として米国特許
第４０２６７４２号及び第４０５７４６０号の明細書を
引用している。
それらの特許明細書は、アルミニウム合金のＲＩＥに伴
う腐食の問題については何ら言及していない。
本発明の要旨 本発明の方法の達成に於ては、例えば４％のＣｕを含む
ＡＡの層中に特定の回路パターンが画成される様に、Ｒ
ＩＥ方法によって超小型回路が形成される。
本発明の方法はＡｌの他の合金にも同様に適用され得る
。
例えば４％の銅を含み得るアルミニウムー銅合金の層が
、表面安定化されたシリコン半導体素子の基板上に真空
中で付着される。
その合金の層はＲＩＥによりパターン化された後、直ち
に真空装置から取出されて脱イオン水中で洗浄される。
本発明の方法に従って、導体層の耐腐食性を増すために
、次に述べる新規な処理工程が導入される。
第１の工程は、空気により形成された酸化物層を除くこ
とであり、該酸化物層は不純物のバルク及びその下に少
量の合金を含む。
上記酸化物層の除去は、燐酸−クロム酸の食刻液中に於
て約５５乃至８０°Ｃで略２分間行われる。
１つの好ましい食刻混合液は、２５００ｍ１の水の中に
溶解された５０ｇのＣｒ ０３及び９０ｒｆＬｌのＨ３
ＰＯ４より戒る。
次に上記導体層が、脱イオン水中に於て室温で約５乃至
１０分間洗浄され、濾過された空気又は窒素中で送風乾
燥される。
それから、上記金属が１気圧の純粋な酸素中に於て３０
０乃至３５０°Ｃの範囲の温度で約３０乃至４５分間酸
化される。
耐腐食性を更に増すために、この順序の処理工程が反復
され得る。
添付図面に於て、曲線ａは、ＲＩＥ及び水洗いによりア
ルミニウムー銅材料が処理される。
、従来技術による処理を表わしている。
促進空気腐食テスト・チェンバ内で数時間の間さらされ
た後に、相当な量の腐食が生じている。
曲線すは、ＲＩＥ及び水洗いの後に酸化が１気圧の酸素
中に於て３５０’Ｃで３０分間行われる、従来技術によ
る処理を表わしている。
腐食の量は相当に減少されており、テスト・チェンバ内
で数日間さらされた後に生じている。
曲線Ｃは、本発明の方法に従って、燐酸−クロム酸の混
合液中での除去及び純粋な酸素中での酸化の処理工程が
更に用いられた後にテスト・チェンバ内に於て生じる腐
食効果を示している。
曲線すにより表わされている処理を用いて得られた場合
よりもずっと大きな表面安定化の改良が得られている。
【図面の簡単な説明】
添付図面は、促進空気腐食テスト・チェンバ内にさらさ
れた時間に関するＡｌの腐食の相対量を、反応性イオン
食刻された導体路を表面安定化するために用いられる従
来技術による２つの異なる方法及び本発明による新規な
方法について示している一連の曲線を示す図である。

Claims (1)

  1. 【特許請求の範囲】 １ 反応性イオン食刻によりパターン化されたアルミニ
    ウムを基材とする導体層の表面部分を、上記層の上部に
    空気により形成された酸化物部分から実質的にすべての
    汚染物が除去される様に、食刻し、 上記層の露出された表面部分を酸素雰囲気中で酸化する
    ことを含む表面安定化方法。
JP57043065A 1981-06-30 1982-03-19 表面安定化方法 Expired JPS5825743B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/278,949 US4368220A (en) 1981-06-30 1981-06-30 Passivation of RIE patterned al-based alloy films by etching to remove contaminants and surface oxide followed by oxidation

Publications (2)

Publication Number Publication Date
JPS583983A JPS583983A (ja) 1983-01-10
JPS5825743B2 true JPS5825743B2 (ja) 1983-05-30

Family

ID=23067075

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57043065A Expired JPS5825743B2 (ja) 1981-06-30 1982-03-19 表面安定化方法

Country Status (4)

Country Link
US (1) US4368220A (ja)
EP (1) EP0068277B1 (ja)
JP (1) JPS5825743B2 (ja)
DE (1) DE3268937D1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05162576A (ja) * 1991-12-12 1993-06-29 Hiraoka & Co Ltd 滑り止め効果の優れた車輛用敷物

Families Citing this family (14)

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EP0146115B1 (en) * 1983-12-16 1989-02-22 Showa Aluminum Corporation Process for producing aluminum material for use in vacuum
JPS6185747A (ja) * 1984-10-02 1986-05-01 Hamamatsu Photonics Kk 二次電子放出面
US5011568A (en) * 1990-06-11 1991-04-30 Iowa State University Research Foundation, Inc. Use of sol-gel derived tantalum oxide as a protective coating for etching silicon
US5565378A (en) * 1992-02-17 1996-10-15 Mitsubishi Denki Kabushiki Kaisha Process of passivating a semiconductor device bonding pad by immersion in O2 or O3 solution
US5462892A (en) * 1992-06-22 1995-10-31 Vlsi Technology, Inc. Semiconductor processing method for preventing corrosion of metal film connections
JPH07283166A (ja) * 1994-02-20 1995-10-27 Semiconductor Energy Lab Co Ltd コンタクトホールの作製方法
US5670255A (en) * 1995-01-23 1997-09-23 Ppg Industries, Inc. Antioxidant compositions for coating substrates, substrates coated with the same and methods for inhibiting the oxidation of such compositions applied to a substrate
JP2764027B2 (ja) * 1996-01-29 1998-06-11 株式会社日立製作所 試料処理方法及び装置
US6174817B1 (en) 1998-08-26 2001-01-16 Texas Instruments Incorporated Two step oxide removal for memory cells
US6150175A (en) * 1998-12-15 2000-11-21 Lsi Logic Corporation Copper contamination control of in-line probe instruments
US6375859B1 (en) 1999-02-04 2002-04-23 International Business Machines Corporation Process for resist clean up of metal structures on polyimide
EP1733421B1 (de) 2004-03-30 2016-08-10 Basf Se Wässrige lösung und verwendung dieser lösung zur entfernung von post-etch residue von halbleitersubstraten
US20090050468A1 (en) * 2007-08-22 2009-02-26 Applied Materials, Inc. Controlled surface oxidation of aluminum interconnect
US11091727B2 (en) 2018-07-24 2021-08-17 Versum Materials Us, Llc Post etch residue cleaning compositions and methods of using the same

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Publication number Priority date Publication date Assignee Title
DE1205192B (de) * 1960-12-17 1965-11-18 Plessey Co Ltd Verfahren zur Herstellung eines elektrolytfreien Metalloxydkondensators
US3647698A (en) * 1969-11-05 1972-03-07 Conversion Chem Corp Composition for cleaning aluminum and method utilizing same
US3634262A (en) * 1970-05-13 1972-01-11 Macdermid Inc Process and compositions for treating aluminum and aluminum alloys
US3666642A (en) * 1971-03-19 1972-05-30 Gen Electric Process of forming aluminum foil
FR2288392A1 (fr) * 1974-10-18 1976-05-14 Radiotechnique Compelec Procede de realisation de dispositifs semiconducteurs
DE2621956A1 (de) * 1975-05-19 1976-12-02 Nat Semiconductor Corp Verfahren zur passivierung einer aluminiumschicht auf einem halbleiter- schaltungsbaustein
DE2539193C3 (de) * 1975-09-03 1979-04-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung eines planeren Leiterbahnsystems für integrierte Halbleiterschaltungen
JPS54158343A (en) * 1978-06-05 1979-12-14 Hitachi Ltd Dry etching method for al and al alloy
US4183781A (en) * 1978-09-25 1980-01-15 International Business Machines Corporation Stabilization process for aluminum microcircuits which have been reactive-ion etched
US4235648A (en) * 1979-04-05 1980-11-25 Motorola, Inc. Method for immersion plating very thin films of aluminum
JPS55158275A (en) * 1979-05-28 1980-12-09 Hitachi Ltd Corrosion preventing method for al and al alloy
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05162576A (ja) * 1991-12-12 1993-06-29 Hiraoka & Co Ltd 滑り止め効果の優れた車輛用敷物

Also Published As

Publication number Publication date
EP0068277A1 (en) 1983-01-05
US4368220A (en) 1983-01-11
DE3268937D1 (en) 1986-03-20
EP0068277B1 (en) 1986-02-05
JPS583983A (ja) 1983-01-10

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