DE3268937D1 - Method for passivating aluminum-based metallizations - Google Patents

Method for passivating aluminum-based metallizations

Info

Publication number
DE3268937D1
DE3268937D1 DE8282105213T DE3268937T DE3268937D1 DE 3268937 D1 DE3268937 D1 DE 3268937D1 DE 8282105213 T DE8282105213 T DE 8282105213T DE 3268937 T DE3268937 T DE 3268937T DE 3268937 D1 DE3268937 D1 DE 3268937D1
Authority
DE
Germany
Prior art keywords
passivating aluminum
based metallizations
metallizations
passivating
aluminum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282105213T
Other languages
English (en)
Inventor
Jerome Michael Eldridge
Michael Heiwo Lee
Geraldine Cogin Schwartz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3268937D1 publication Critical patent/DE3268937D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02244—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
    • C23C8/10—Oxidising
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/20—Acidic compositions for etching aluminium or alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31683—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of metallic layers, e.g. Al deposited on the body, e.g. formation of multi-layer insulating structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
DE8282105213T 1981-06-30 1982-06-15 Method for passivating aluminum-based metallizations Expired DE3268937D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/278,949 US4368220A (en) 1981-06-30 1981-06-30 Passivation of RIE patterned al-based alloy films by etching to remove contaminants and surface oxide followed by oxidation

Publications (1)

Publication Number Publication Date
DE3268937D1 true DE3268937D1 (en) 1986-03-20

Family

ID=23067075

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282105213T Expired DE3268937D1 (en) 1981-06-30 1982-06-15 Method for passivating aluminum-based metallizations

Country Status (4)

Country Link
US (1) US4368220A (de)
EP (1) EP0068277B1 (de)
JP (1) JPS5825743B2 (de)
DE (1) DE3268937D1 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0146115B1 (de) * 1983-12-16 1989-02-22 Showa Aluminum Corporation Verfahren zur Herstellung eines Aluminiumwerkstoffes zur Anwendung im Vakuum
JPS6185747A (ja) * 1984-10-02 1986-05-01 Hamamatsu Photonics Kk 二次電子放出面
US5011568A (en) * 1990-06-11 1991-04-30 Iowa State University Research Foundation, Inc. Use of sol-gel derived tantalum oxide as a protective coating for etching silicon
JPH05162576A (ja) * 1991-12-12 1993-06-29 Hiraoka & Co Ltd 滑り止め効果の優れた車輛用敷物
US5565378A (en) * 1992-02-17 1996-10-15 Mitsubishi Denki Kabushiki Kaisha Process of passivating a semiconductor device bonding pad by immersion in O2 or O3 solution
US5462892A (en) * 1992-06-22 1995-10-31 Vlsi Technology, Inc. Semiconductor processing method for preventing corrosion of metal film connections
JPH07283166A (ja) * 1994-02-20 1995-10-27 Semiconductor Energy Lab Co Ltd コンタクトホールの作製方法
US5670255A (en) * 1995-01-23 1997-09-23 Ppg Industries, Inc. Antioxidant compositions for coating substrates, substrates coated with the same and methods for inhibiting the oxidation of such compositions applied to a substrate
JP2764027B2 (ja) * 1996-01-29 1998-06-11 株式会社日立製作所 試料処理方法及び装置
US6174817B1 (en) 1998-08-26 2001-01-16 Texas Instruments Incorporated Two step oxide removal for memory cells
US6150175A (en) * 1998-12-15 2000-11-21 Lsi Logic Corporation Copper contamination control of in-line probe instruments
US6375859B1 (en) 1999-02-04 2002-04-23 International Business Machines Corporation Process for resist clean up of metal structures on polyimide
US7919445B2 (en) 2004-03-30 2011-04-05 Basf Aktiengesellschaft Aqueous solution for removing post-etch residue
US20090050468A1 (en) * 2007-08-22 2009-02-26 Applied Materials, Inc. Controlled surface oxidation of aluminum interconnect
US11091727B2 (en) 2018-07-24 2021-08-17 Versum Materials Us, Llc Post etch residue cleaning compositions and methods of using the same

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1205192B (de) * 1960-12-17 1965-11-18 Plessey Co Ltd Verfahren zur Herstellung eines elektrolytfreien Metalloxydkondensators
US3647698A (en) * 1969-11-05 1972-03-07 Conversion Chem Corp Composition for cleaning aluminum and method utilizing same
US3634262A (en) * 1970-05-13 1972-01-11 Macdermid Inc Process and compositions for treating aluminum and aluminum alloys
US3666642A (en) * 1971-03-19 1972-05-30 Gen Electric Process of forming aluminum foil
FR2288392A1 (fr) * 1974-10-18 1976-05-14 Radiotechnique Compelec Procede de realisation de dispositifs semiconducteurs
DE2621956A1 (de) * 1975-05-19 1976-12-02 Nat Semiconductor Corp Verfahren zur passivierung einer aluminiumschicht auf einem halbleiter- schaltungsbaustein
DE2539193C3 (de) * 1975-09-03 1979-04-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung eines planeren Leiterbahnsystems für integrierte Halbleiterschaltungen
JPS54158343A (en) * 1978-06-05 1979-12-14 Hitachi Ltd Dry etching method for al and al alloy
US4183781A (en) * 1978-09-25 1980-01-15 International Business Machines Corporation Stabilization process for aluminum microcircuits which have been reactive-ion etched
US4235648A (en) * 1979-04-05 1980-11-25 Motorola, Inc. Method for immersion plating very thin films of aluminum
JPS55158275A (en) * 1979-05-28 1980-12-09 Hitachi Ltd Corrosion preventing method for al and al alloy
US4314855A (en) * 1979-12-17 1982-02-09 Bell Telephone Laboratories, Incorporated Method of cleaning test probes

Also Published As

Publication number Publication date
EP0068277A1 (de) 1983-01-05
EP0068277B1 (de) 1986-02-05
JPS583983A (ja) 1983-01-10
JPS5825743B2 (ja) 1983-05-30
US4368220A (en) 1983-01-11

Similar Documents

Publication Publication Date Title
PL253739A1 (en) Method of obtaining lymphotoxins
GB2159432B (en) Combustion method
JPS57143896A (en) Method of bonding electronic part
DE3276043D1 (en) Method of converting the number of lines
GB8429402D0 (en) Oil concentrating method
PL242971A1 (en) Antiphlogistine obtaining method
DE3371499D1 (en) Scale preventing method
DE3268937D1 (en) Method for passivating aluminum-based metallizations
GB8305178D0 (en) Ic engine
JPS57160536A (en) Method of forging die
JPS57154346A (en) Precise forging method
GB8310845D0 (en) Delay compensation method
DE3264553D1 (en) Method of making aluminium alkyls
DE3362966D1 (en) Method of reducing corrosion of aluminium components
DE3273524D1 (en) Construction method
GB2160562B (en) Ground-freezing method
GB2160456B (en) Casting method
JPS57132395A (en) Method of soldering chip part
ZA82790B (en) Metal refining method
JPS57111089A (en) Method of sodering chip part
EP0171043A3 (en) Passivating process for lead and lead-containing surfaces
GB2099020B (en) Corrosion protection method
GB8322843D0 (en) Method of construction
JPS57143803A (en) Method of forming resisotr
JPS57166022A (en) Method of resin-sealed capacitor

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee