JPS58219743A - Ｍｏｓ型半導体装置の試験方法 - Google Patents
Ｍｏｓ型半導体装置の試験方法Info
- Publication number
- JPS58219743A JPS58219743A JP57101351A JP10135182A JPS58219743A JP S58219743 A JPS58219743 A JP S58219743A JP 57101351 A JP57101351 A JP 57101351A JP 10135182 A JP10135182 A JP 10135182A JP S58219743 A JPS58219743 A JP S58219743A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- field oxide
- type semiconductor
- semiconductor device
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 16
- 238000012360 testing method Methods 0.000 title claims description 15
- 230000007547 defect Effects 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 7
- 238000009792 diffusion process Methods 0.000 claims description 16
- 239000000758 substrate Substances 0.000 abstract description 3
- 238000007689 inspection Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000011179 visual inspection Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010291 electrical method Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57101351A JPS58219743A (ja) | 1982-06-15 | 1982-06-15 | Ｍｏｓ型半導体装置の試験方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57101351A JPS58219743A (ja) | 1982-06-15 | 1982-06-15 | Ｍｏｓ型半導体装置の試験方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58219743A true JPS58219743A (ja) | 1983-12-21 |
| JPS6257255B2 JPS6257255B2 (enExample) | 1987-11-30 |
Family
ID=14298410
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57101351A Granted JPS58219743A (ja) | 1982-06-15 | 1982-06-15 | Ｍｏｓ型半導体装置の試験方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58219743A (enExample) |
-
1982
- 1982-06-15 JP JP57101351A patent/JPS58219743A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6257255B2 (enExample) | 1987-11-30 |
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