JPS58215087A - 面発光形レ−ザ素子の製造方法 - Google Patents

面発光形レ−ザ素子の製造方法

Info

Publication number
JPS58215087A
JPS58215087A JP9736582A JP9736582A JPS58215087A JP S58215087 A JPS58215087 A JP S58215087A JP 9736582 A JP9736582 A JP 9736582A JP 9736582 A JP9736582 A JP 9736582A JP S58215087 A JPS58215087 A JP S58215087A
Authority
JP
Japan
Prior art keywords
layer
etching
cladding
substrate
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9736582A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0381316B2 (enExample
Inventor
Kenichi Iga
伊賀健一
Haruhisa Soda
茂木祥宏
Sachihiro Mogi
雙田晴久
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Institute of Technology
Original Assignee
Tokyo Institute of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Institute of Technology filed Critical Tokyo Institute of Technology
Priority to JP9736582A priority Critical patent/JPS58215087A/ja
Publication of JPS58215087A publication Critical patent/JPS58215087A/ja
Publication of JPH0381316B2 publication Critical patent/JPH0381316B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP9736582A 1982-06-07 1982-06-07 面発光形レ−ザ素子の製造方法 Granted JPS58215087A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9736582A JPS58215087A (ja) 1982-06-07 1982-06-07 面発光形レ−ザ素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9736582A JPS58215087A (ja) 1982-06-07 1982-06-07 面発光形レ−ザ素子の製造方法

Publications (2)

Publication Number Publication Date
JPS58215087A true JPS58215087A (ja) 1983-12-14
JPH0381316B2 JPH0381316B2 (enExample) 1991-12-27

Family

ID=14190472

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9736582A Granted JPS58215087A (ja) 1982-06-07 1982-06-07 面発光形レ−ザ素子の製造方法

Country Status (1)

Country Link
JP (1) JPS58215087A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0556863A3 (enExample) * 1992-02-20 1994-01-19 Sumitomo Electric Industries

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54123887A (en) * 1978-03-17 1979-09-26 Matsushita Electric Ind Co Ltd Photo integrated citcuit
JPS55111192A (en) * 1979-02-13 1980-08-27 Philips Nv Semiconductor laser and method of fabricating same
JPS5698888A (en) * 1980-01-09 1981-08-08 Tokyo Inst Of Technol Light emitting semiconductor laser

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54123887A (en) * 1978-03-17 1979-09-26 Matsushita Electric Ind Co Ltd Photo integrated citcuit
JPS55111192A (en) * 1979-02-13 1980-08-27 Philips Nv Semiconductor laser and method of fabricating same
JPS5698888A (en) * 1980-01-09 1981-08-08 Tokyo Inst Of Technol Light emitting semiconductor laser

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0556863A3 (enExample) * 1992-02-20 1994-01-19 Sumitomo Electric Industries
US5359619A (en) * 1992-02-20 1994-10-25 Sumitomo Electric Industries, Ltd. Multi-beam semiconductor laser and method for producing the same

Also Published As

Publication number Publication date
JPH0381316B2 (enExample) 1991-12-27

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