JPH0381316B2 - - Google Patents

Info

Publication number
JPH0381316B2
JPH0381316B2 JP57097365A JP9736582A JPH0381316B2 JP H0381316 B2 JPH0381316 B2 JP H0381316B2 JP 57097365 A JP57097365 A JP 57097365A JP 9736582 A JP9736582 A JP 9736582A JP H0381316 B2 JPH0381316 B2 JP H0381316B2
Authority
JP
Japan
Prior art keywords
layer
reflective mirror
mirror surface
emitting laser
laser device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57097365A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58215087A (ja
Inventor
Kenichi Iga
Haruhisa Soda
Sachihiro Mogi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TOKYO KOGYO DAIGAKUCHO
Original Assignee
TOKYO KOGYO DAIGAKUCHO
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TOKYO KOGYO DAIGAKUCHO filed Critical TOKYO KOGYO DAIGAKUCHO
Priority to JP9736582A priority Critical patent/JPS58215087A/ja
Publication of JPS58215087A publication Critical patent/JPS58215087A/ja
Publication of JPH0381316B2 publication Critical patent/JPH0381316B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP9736582A 1982-06-07 1982-06-07 面発光形レ−ザ素子の製造方法 Granted JPS58215087A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9736582A JPS58215087A (ja) 1982-06-07 1982-06-07 面発光形レ−ザ素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9736582A JPS58215087A (ja) 1982-06-07 1982-06-07 面発光形レ−ザ素子の製造方法

Publications (2)

Publication Number Publication Date
JPS58215087A JPS58215087A (ja) 1983-12-14
JPH0381316B2 true JPH0381316B2 (enExample) 1991-12-27

Family

ID=14190472

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9736582A Granted JPS58215087A (ja) 1982-06-07 1982-06-07 面発光形レ−ザ素子の製造方法

Country Status (1)

Country Link
JP (1) JPS58215087A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2089900C (en) * 1992-02-20 2001-10-16 Ichiro Yoshida Multi-beam semiconductor laser and method for producing the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54123887A (en) * 1978-03-17 1979-09-26 Matsushita Electric Ind Co Ltd Photo integrated citcuit
NL7901122A (nl) * 1979-02-13 1980-08-15 Philips Nv Halfgeleiderlaser en werkwijze ter vervaardiging daarvan.
JPS5698888A (en) * 1980-01-09 1981-08-08 Tokyo Inst Of Technol Light emitting semiconductor laser

Also Published As

Publication number Publication date
JPS58215087A (ja) 1983-12-14

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